N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP03N70H/J-H
Pb Free Plating Product
Advanced Power Electronics Corp.
¡¿ ¡¿ ¡¿ ¡¿ Repetitive Avalanche Rated Fast Switc...
Description
AP03N70H/J-H
Pb Free Plating Product
Advanced Power Electronics Corp.
¡¿ ¡¿ ¡¿ ¡¿ Repetitive Avalanche Rated Fast Switching Speed Simple Drive Requirement RoHS Compliant G S
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
700V 4.4£[ 2.5A
Description
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for AC/DC converters. The through-hole version (AP03N70J) is available for lowprofile applications.
G D S
TO-252(H)
G
DS
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25¢J ID@TC=100¢J IDM PD@TC=25¢J EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating 700 ±30 2.5 1.6 8 54.3 0.44
2
Units V V A A A W W/¢J mJ A ¢J ¢J
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
31 2.5 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.3 110 Units ¢J /W ¢J /W
Data & specifications subject to change without notice
200417062-1/4
AP03N70H/J-H
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
£GB VDSS/£G Tj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=1mA
Min. 700 2 -
Typ. 0.6 2 12 3 4 8.5 6 19 8 590 50 6 3.4
Max. Units 4.4 4 10 1...
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