DatasheetsPDF.com

AP03N70I-A-HF Dataheets PDF



Part Number AP03N70I-A-HF
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP03N70I-A-HF DatasheetAP03N70I-A-HF Datasheet (PDF)

AP03N70I-A-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 650V 3.6Ω 3.3A G S Description AP03N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO-220CFM type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best com.

  AP03N70I-A-HF   AP03N70I-A-HF



Document
AP03N70I-A-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 650V 3.6Ω 3.3A G S Description AP03N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO-220CFM type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness. G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 650 +30 3.3 2.1 10 29 0.23 2 Units V V A A A W W/ ℃ mJ A ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 67 3 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 4.3 65 Units ℃/W ℃/W 1 201008252 Data & specifications subject to change without notice AP03N70I-A-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA 3 Min. 650 2 - Typ. 0.6 2 12 3 5 9 5 18 6 600 45 4 Max. Units 3.6 4 10 500 +100 20 960 V V/℃ Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current VGS=10V, ID=1.6A VDS=VGS, ID=250uA VDS=10V, ID=1.6A VDS=600V, VGS=0V Drain-Source Leakage Current (T j=125 C) VDS=480V, VGS=0V o Gate-Source Leakage Total Gate Charge 3 VGS=+30V, VDS=0V ID=3A VDS=480V VGS=10V VDD=300V ID=3A RG=10Ω VGS=10V VGS=0V VDS=25V f=1.0MHz Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 Source-Drain Diode Symbol VSD trr Qrr Notes: 1.Pulse width limited by Max. junction temperature 2.Starting Tj=25 C , VDD=50V , L=15mH , RG=25Ω , IAS=3A. 3.Pulse test o Parameter Forward On Voltage 3 3 Test Conditions IS=3A, VGS=0V IS=3A, VGS=0V, dI/dt=100A/µs Min. - Typ. 422 2580 Max. Units 1.5 V ns nC Reverse Recovery Time Reverse Recovery Charge THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP03N70I-A-HF 4 3 T C =25 C ID , Drain Current (A) 3 o 10V 6.0V 2 T C =150 C ID , Drain Current (A) o 10V 5.0V 2 4.5V 2 5.0V 1 1 4.0V 4.5V V G =4.0V 1 V G =3.5V 0 0 0 5 10 15 20 25 0 5 10 15 20 25 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 2.4 2.0 Normalized BVDSS (V) 1.1 Normalized RDS(ON) I D =1.6A V G =10V 1.6 1.0 1.2 0.8 0.9 0.4 0.8 -50 0 50 100 150 0.0 -50 0 50 100 150 T j , Junction Temperature ( C) o T j , Junction Temperature ( C) o Fig 3. Normalized BVDSS v.s. Junction Temperature 100 1.4 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.2 10 IS (A) T j = 150 o C 1 T j = 25 o C Normalized VGS(th) (V) 1.3 1 0.8 0.1 0.6 0.01 0.1 0.3 0.5 0.7 0.9 1.1 0.4 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP03N70I-A-HF 14 10000 f=1.0MHz 12 I D =3A V DS =480V VGS , Gate to Source Voltage (V) 10 C iss C (pF) 8 100 6 C oss 4 2 C rss 1 0 0 4 8 12 16 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 10 Normalized Thermal Response (Rthjc) Duty factor=0.5 0.2 ID (A) 0.1 1 100us 1ms 10ms 100ms 1s DC 0.1 0.05 PDM 0.02 0.01 t T Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0 T c =25 C Single Pulse 0 1 10 100 o Single Pulse 0.01 1000 10000 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective.


AP03N70I-A-HF-3 AP03N70I-A-HF AP04N70BI-H-HF-3


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)