D1264

DATA SHEET SILICON POWER TRANSISTOR 2SD2164 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2164 is a single power transistor developed especially for high hFE. This transistor is ideal for simplifying drive circuits and reducing power dissipation because its hFE is as high as that of Darlington transistors, but it is a single transistor. In addition, this transistor features a small resin insulated package, thus contributing to high-density mounting and mounting cost reduction. PACKAGE DRAWING (UNIT: mm) FEATURES High hFE and low VCE(sat): hFE ≅ 1,300 TYP. (VCE = 5.0 V, IC = 0.5 A) VCE(SAT) ≅ 0.3 V TYP. (IC = 2.0 A, IB = 20 mA) Full mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT (TC = 25°C) PT (TA = 25°C) Tj Tstg Ratings 60 60 7.0 3.0 5.0 Note (OHFWURGH &RQQHFWLRQ  %DVH Unit V V V A A A W W °C °C  &ROOHFWRU  (PLWWHU 0.5 20 2.0 150 −55 to +150 Note PW ≤ 300 µs, duty cycle ≤ 10% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types availa...