DATA SHEET
SILICON POWER TRANSISTOR
2SD2164
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LO...
DATA SHEET
SILICON POWER
TRANSISTOR
2SD2164
NPN SILICON EPITAXIAL
TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD2164 is a single power
transistor developed especially for high hFE. This
transistor is ideal for simplifying drive circuits and reducing power dissipation because its hFE is as high as that of Darlington
transistors, but it is a single
transistor. In addition, this
transistor features a small resin insulated package, thus contributing to high-density mounting and mounting cost reduction.
PACKAGE DRAWING (UNIT: mm)
FEATURES
High hFE and low VCE(sat): hFE ≅ 1,300 TYP. (VCE = 5.0 V, IC = 0.5 A) VCE(SAT) ≅ 0.3 V TYP. (IC = 2.0 A, IB = 20 mA) Full mold package that does not require an insulating board or insulation bushing
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT (TC = 25°C) PT (TA = 25°C) Tj Tstg Ratings 60 60 7.0 3.0 5.0
Note
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Unit V V V A A A W W °C °C
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0.5 20 2.0 150 −55 to +150
Note PW ≤ 300 µs, duty cycle ≤ 10%
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