YG812S04R

http://www.fujisemi.com YG812S04R Schottky Barrier Diode Maximum Rating and Characteristics Maximum ratings (at Ta=25˚C unless otherwise specified.) Item Repetitive peak surge reverse voltage Repetitive peak reverse voltage Isolating voltage Average forward current Non-repetitive forward surge current Operating junction temperature Storage temperature Symbols VRSM VRRM Viso IFAV IFSM Tj Tstg Conditions tw=500ns, duty=1/40 Terminals-to-case, AC.1min 50Hz Square wave duty =1/2 Tc = 124˚C Sine wave, 10ms 1shot Ratings 48 45 1500 10 120 150 -40 to +150 FUJI Diode Units V V V A A ˚C ˚C Electrical characteristics Item Forward voltage Reverse current Thermal resistance (at Ta=25˚C unless otherwise specified.) Symbols VF IR Rth(j-c) IF =10 A VR =VRRM Junction to case Conditions Maximum 0.6 2.0 2.5 Units V mA ˚C/W Mechanical characteristics Item Mounting torque Approximate mass Conditions Recommended torque Maximum 0.3 to 0.5 1.7 Units Nm g 1 YG812S04R Outline Drawings [mm] http://www.fujisemi.com FUJI Diode YG812S04 YG812S04 2 YG812S04R Forward Characteristic (typ.) 100 http://www.fujisemi.com Reverse Characteristic (typ.) FUJI Diode 10 2 Tj=150°C Tj=125°C 10 10 1 Tj=100°C Tj=150°C Tj=125°C Tj=100°C Tj=25°C (mA) Reverse Current 10 0 Forward Current (A) 10 -1 1 IF IR Tj=25°C 10 -2 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 10 -3 0 10 20 30 40 50 VF Forward Voltage (V) Forward Power Dissipation (max.) 14 VR Reverse Voltage (V) Reverse Power Dissipation (...