Document
YG811S09R
SCHOTTKY BARRIER DIODE
(90V / 5A TO-22OF15)
Outline Drawings
10.5±0.5 ø3.2
+0.2 -0.1
4.5±0.2 2.7±0.2 6.3
2.7±0.2
Features
Low VF Super high speed switching. High reliability by planer design.
3.7±0.2
1.2±0.2 13Min 0.7±0.2
15±0.3
0.6±0.2 2.7±0.2
5.08±0.4
Applications
High speed power switching.
JEDEC EIAJ
SC-67
Connection Diagram
1 3
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Item Repetitive peak reverse voltage Repetitive peak surge reverse voltage Isolation voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM Viso IO IFSM Tj Tstg Conditions
Rating 90
Unit V V V A A °C °C
tw=500ns, duty=1/40 Terminals to Case, AC. 1min. duty=1/2, Tc=116°C Rectangl wave Sine wave 10ms
100 1500 5 80 -40 to +150 -40 to +150
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Item Forward voltage drop Reverse current Thermal resistance Symbol VF IR Rth(j-c) Conditions IF=4.0A VR=VRRM Junction to case Max. 0.9 5.0 5.0 Unit V mA °C/W
Mechanical Characteristics
Mounting torque Weight Recommended torque 0.3 to 0.5 2.3 N·m g
(90V / 5A TO-22OF15)
Characteristics
Forward Characteristic (typ.)
10
2
YG811S09R
Reverse Characteristic (typ.)
Tj=150 C
o o
10
Tj=150 Tj=125 Tj=100
o o
C C C Tj=25 C
o o
(mA)
(A)
10
1
Tj=125 C
Tj=100 C
o
Forward Current
Reverse Current
10
0
1
10
-1
Tj=25 C
o
IF
IR
0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
10
-2
10
-3
0
10
20
30
40
50
60
70
80
90
100 110
VF
Forward Voltage
(V)
VR
Reverse Voltage
(V)
(W)
8
Forward Power Dissipation
Io
20 18
Reverse Power Dissipation
DC
360°
(W)
7 6 5 4 3 2 1
Reverse Power Dissipation
Forward Power Dissipation
λ 360°
16
VR
14
α
Square wave λ=60 o Square wave λ=120 o Sine wave λ=180 o Square wave λ=180 DC
o
12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 90 100
α=180
o
WF
Per 1element
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Io
Average Forward Current
(A)
PR
VR
Reverse Voltage
(V)
160 150 140
Current Derating (Io-Tc)
(pF)
1000
Junction Capacitance Characteristic (typ.)
( C)
130 120 110
DC
Case Temperature
Sine wave λ=180
o o
Junction Capacitance Cj
o
Square wave λ=180
100
Square wave λ=120
o
100 90 80
360° λ Io
VR=50V
Square wave λ=60
o
Tc
70 0 1 2 3 4 5 6 7 8
10 10 100
Io
Average Output Current
(A)
VR
Reverse Voltage
(V)
λ :Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
(90V / 5A TO-22OF15)
YG811S09R
Peak Half - Wave Current I FSM
(A)
1000
Surge Capability
100
10 1 10 100
Number of Cycles at 50Hz
10
2
Transient Thermal Impedance
Transient Thermal Impedance
( C/W)
10
1
o
10
0
10
-1
10
-3
10
-2
10
-1
10
0
10
1
10
2
t
Time
(sec.)
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
.