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YG811S09R Dataheets PDF



Part Number YG811S09R
Manufacturers Fuji Electric
Logo Fuji Electric
Description SCHOTTKY BARRIER DIODE
Datasheet YG811S09R DatasheetYG811S09R Datasheet (PDF)

YG811S09R SCHOTTKY BARRIER DIODE (90V / 5A TO-22OF15) Outline Drawings 10.5±0.5 ø3.2 +0.2 -0.1 4.5±0.2 2.7±0.2 6.3 2.7±0.2 Features Low VF Super high speed switching. High reliability by planer design. 3.7±0.2 1.2±0.2 13Min 0.7±0.2 15±0.3 0.6±0.2 2.7±0.2 5.08±0.4 Applications High speed power switching. JEDEC EIAJ SC-67 Connection Diagram 1 3 Maximum Ratings and Characteristics Absolute Maximum Ratings Item Repetitive peak reverse voltage Repetitive peak surge reverse voltage Isola.

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YG811S09R SCHOTTKY BARRIER DIODE (90V / 5A TO-22OF15) Outline Drawings 10.5±0.5 ø3.2 +0.2 -0.1 4.5±0.2 2.7±0.2 6.3 2.7±0.2 Features Low VF Super high speed switching. High reliability by planer design. 3.7±0.2 1.2±0.2 13Min 0.7±0.2 15±0.3 0.6±0.2 2.7±0.2 5.08±0.4 Applications High speed power switching. JEDEC EIAJ SC-67 Connection Diagram 1 3 Maximum Ratings and Characteristics Absolute Maximum Ratings Item Repetitive peak reverse voltage Repetitive peak surge reverse voltage Isolation voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM Viso IO IFSM Tj Tstg Conditions Rating 90 Unit V V V A A °C °C tw=500ns, duty=1/40 Terminals to Case, AC. 1min. duty=1/2, Tc=116°C Rectangl wave Sine wave 10ms 100 1500 5 80 -40 to +150 -40 to +150 Electrical Characteristics (Ta=25°C Unless otherwise specified ) Item Forward voltage drop Reverse current Thermal resistance Symbol VF IR Rth(j-c) Conditions IF=4.0A VR=VRRM Junction to case Max. 0.9 5.0 5.0 Unit V mA °C/W Mechanical Characteristics Mounting torque Weight Recommended torque 0.3 to 0.5 2.3 N·m g (90V / 5A TO-22OF15) Characteristics Forward Characteristic (typ.) 10 2 YG811S09R Reverse Characteristic (typ.) Tj=150 C o o 10 Tj=150 Tj=125 Tj=100 o o C C C Tj=25 C o o (mA) (A) 10 1 Tj=125 C Tj=100 C o Forward Current Reverse Current 10 0 1 10 -1 Tj=25 C o IF IR 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 -2 10 -3 0 10 20 30 40 50 60 70 80 90 100 110 VF Forward Voltage (V) VR Reverse Voltage (V) (W) 8 Forward Power Dissipation Io 20 18 Reverse Power Dissipation DC 360° (W) 7 6 5 4 3 2 1 Reverse Power Dissipation Forward Power Dissipation λ 360° 16 VR 14 α Square wave λ=60 o Square wave λ=120 o Sine wave λ=180 o Square wave λ=180 DC o 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 90 100 α=180 o WF Per 1element 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Io Average Forward Current (A) PR VR Reverse Voltage (V) 160 150 140 Current Derating (Io-Tc) (pF) 1000 Junction Capacitance Characteristic (typ.) ( C) 130 120 110 DC Case Temperature Sine wave λ=180 o o Junction Capacitance Cj o Square wave λ=180 100 Square wave λ=120 o 100 90 80 360° λ Io VR=50V Square wave λ=60 o Tc 70 0 1 2 3 4 5 6 7 8 10 10 100 Io Average Output Current (A) VR Reverse Voltage (V) λ :Conduction angle of forward current for each rectifier element Io:Output current of center-tap full wave connection (90V / 5A TO-22OF15) YG811S09R Peak Half - Wave Current I FSM (A) 1000 Surge Capability 100 10 1 10 100 Number of Cycles at 50Hz 10 2 Transient Thermal Impedance Transient Thermal Impedance ( C/W) 10 1 o 10 0 10 -1 10 -3 10 -2 10 -1 10 0 10 1 10 2 t Time (sec.) Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com .


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