ESAC63-006

http://www.fujisemi.com ESAC63-006R Schottky Barrier Diode Maximum Rating and Characteristics Maximum ratings (at Ta=25˚C unless otherwise specified.) Item Repetitive peak reverse voltage Average output current Non-repetitive forward surge current** Operating junction temperature Storage temperature Note* Out put current of center tap full wave connection. Note** Rating per element FUJI Diode Symbols VRRM Io IFSM Tj Tstg Conditions 50Hz Square wave duty =1/2 Tc = 118˚C Sine wave, 10ms 1shot Ratings 60 20 * 120 150 -40 to +150 Units V A A ˚C ˚C - Electrical characteristics Item Forward voltage*** Reverse current*** Thermal resistance Note*** Rating per element (at Ta=25˚C unless otherwise specified.) Symbols VF IR Rth(j-c) IF = 8 A VR =VRRM Junction to case Conditions Maximum 0.58 15 2 Units V mA ˚C/W Mechanical characteristics Item Mounting torque Approximate mass Conditions Recommended torque Maximum 0.3 to 0.5 2 Units Nm g 1 ESAC63-006R Outline Drawings [mm] http://www.fujisemi.com FUJI Diode 006 006 2 ESAC63-006R http://www.fujisemi.com FUJI Diode Forward Characteristic 100 (typ.) 102 Reverse Characteristic (typ.) Tj=150℃ Tj=125℃ 10 10 1 Tj=100℃ （ｍＡ） Reverse Current ＩR Tj=150℃ 100 （Ａ） Tj=125℃ 1 Tj=100℃ Tj=25℃ Forward Current 10-1 Tj= 25℃ 10-2 ＩＦ 0.1 0.01 0.0 10-3 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50 60 70 ＶＦ Forward Voltage （Ｖ） ＶR Reverse Voltage （Ｖ） Forward Power Dissipation(max.) 14 Reverse Power Dissipation(max.)...