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ESAC82-006

Fuji Electric

SCHOTTKY BARRIER DIODE

ESAC82-006 (10A) SCHOTTKY BARRIER DIODE 10+0.5 0 2.7±0.1 (60V / 10A ) Outline drawings, mm Ø3.6±0.2 4.5±0.2 0 14 -0.5 ...


Fuji Electric

ESAC82-006

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ESAC82-006 (10A) SCHOTTKY BARRIER DIODE 10+0.5 0 2.7±0.1 (60V / 10A ) Outline drawings, mm Ø3.6±0.2 4.5±0.2 0 14 -0.5 1.2 3.7±0.2 15±0.2 6.4±0.2 0.4 1 2 3 0.8 2.54 5.08 2.7 Features Low VF Super high speed switching High reliability by planer design JEDEC EIAJ TO-220AB SC-46 Connection diagram Applications High speed power switching 1 2 3 Maximum ratings and characteristics Absolute maximum ratings Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM Io IFSM Tj Tstg tw=500ns, duty=1/40 Square wave, duty=1/2 Tc=123°C Sine wave 10ms Conditions Rating 60 60 10* 80 -40 to +150 -40 to +150 Unit V V A A °C °C * Average forward current of centertap full wave connection Electrical characteristics (Ta=25°C Unless otherwise specified ) Item Forward voltage drop Reverse current Themal resistance Symbol VFM IRRM Rth(j-c) Conditions IFM=4.0A VR=VRRM Junction to case Max. 0.58 5 3.0 Unit V mA °C/W (60V / 10A ) Characteristics Forward Characteristic (typ.) 100 10 2 ESAC82-006 (10A) Reverse Characteristic (typ.) Tj=150°C 10 1 Tj=125°C (mA) (A) 10 Tj=150°C Tj=125°C Tj=100°C Tj=25°C Tj=100°C 10 0 Forward Current Reverse Current IR 1 10 -1 IF Tj=25°C 10 -2 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 10 20 30 40 50 60 70 VF Forward Voltage (V) VR Reverse Voltage (V) Forward Power Dissipation 6.0 5.5 Io Reverse Power Dis...




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