KS823C09

KS823C09 (5A) SCHOTTKY BARRIER DIODE 6.5 ±0.2 (90V / 5A ) Outline drawings, mm 1.5 —0.1 +0.2 2.3±0.2 0.5 5±0.2 5.5 ±0.2 0 .9 —0.1 4.6 +0.2 Features Surface mount device Low VF Super high speed switching High reliability by planer design JEDEC EIAJ 1. Gate 2, 4. Drain 3. Source Connection diagram Applications High speed power switching 1 2 4 3 Maximum ratings and characteristics Absolute maximum ratings Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM Io IFSM Tj Tstg tw=500ns, duty=1/40 Square wave, duty=1/2 Tc=100°C Sine wave 10ms Conditions Rating 90 90 5.0* 60 -40 to +150 -40 to +150 Unit V V A A °C °C * Average forward current of centertap full wave connection Electrical characteristics (Ta=25°C Unless otherwise specified ) Item Forward voltage drop Reverse current Thermal resistance Symbol VFM IRRM Rth(j-c) Conditions IFM=2.5A VR=VRRM Junction to case Max. 0.9 5.0 10 Unit V mA °C/W 1.0 2.5 ±0.5 (90V / 5A ) Characteristics Forward Characteristic (typ.) 100 10 2 KS823C04 (5A) Reverse Characteristic (typ.) Tj=150°C 10 1 Tj=125°C Forward Current (A) 10 Reverse Current (mA) Tj=100°C 10 0 Tj=150°C Tj=125°C Tj=100°C Tj=25°C 1 10 -1 IF Tj= 25°C IR 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 10 -2 10 -3 0 10 20 30 40 50 60 70 80 90 100 110 VF Forward Voltage (V) VR Reverse Voltage (V) For...