N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP9997GH/J-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Fast...
Description
Advanced Power Electronics Corp.
AP9997GH/J-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Fast Switching Characteristic Lower Gate Charge RoHS-compliant, halogen-free G S D
BV DSS R DS(ON) ID
100V 120mΩ 11A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
G D S
D (tab)
TO-252 (H)
The AP9997GH-HF-3 is in the TO-252 package which is widely preferred for commercial and industrial surface mount applications such as medium-power DC/DC converters. The through-hole TO-251 version (AP9997GJ-HF-3) is available where a small PCB footprint is required.
G D S
D (tab)
TO-251 (J)
Absolute Maximum Ratings
Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
Rating 100 ±20 11 7 30 34.7
Units V V A A A W W °C °C
Total Power Dissipation Total Power Dissipation
3
2 -55 to 150 -55 to 150
Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value 3.6 62.5 110
Units °C/W °C/W °C/W
Maixmum Thermal Resistance, Junction-ambient
Ordering Information
AP9997GH-HF-3TR : in RoHS-compliant halogen-free TO-252 shipped on tape and reel (3000 pcs/reel)...
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