N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP9997GK-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low Ga...
Description
Advanced Power Electronics Corp.
AP9997GK-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low Gate Charge Fast Switching Characteristics RoHS-compliant, Halogen-free
D
BV DSS R DS(ON)
G S
100V 120mΩ 3.2A
ID
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP9997GK-HF-3 is in the popular SOT-223 small surface-mount package which is widely used in commercial and industrial applications where a small board footprint is required. This device is well suited for use in medium current applications such as load switches.
(tab) D
S D G SOT-223 (K)
Absolute Maximum Ratings
Symbol VDS VGS ID at T A =25°C ID at TA= 70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 100 + 20 3.2 2.6 20 2.8 -55 to 150 -55 to 150
Units V V A A A W °C °C
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 45 Unit °C/W
Ordering Information
AP9997GK-HF-3TR RoHS-compliant halogen-free SOT-223, shipped on tape and reel, 3000pcs/ reel
©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com
201006153-3
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Advanced Power Electronics Corp.
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol BVDSS RDS(ON) Para...
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