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HAF2007

Hitachi Semiconductor

Silicon N Channel MOS FET Series Power Switching


Description
HAF2007(L), HAF2007(S) Silicon N Channel MOS FET Series Power Switching Target specification ADE-208-706 (Z) 1st. Edition Dec. 1998 This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage...



Hitachi Semiconductor

HAF2007

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