AP40T10GR

AP40T10GR RoHS-compliant Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Single Drive Requirement ▼ Fast Switching Characteristic G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 100V 35mΩ 40A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S TO-262(R) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 100 +20 40 27 150 125 -55 to 175 -55 to 175 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.2 62 Units ℃/W ℃/W 1 200904141 Data and specifications subject to change without notice AP40T10GR Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=15A VGS=6V, ID=10A VDS=VGS, ID=250uA VDS=15V, ID=15A VDS=100V, VGS=0V o Min. 100 2 - Typ. 14.5 24 5.4 9.6 9 64 19 75 270 85 Max. Units 35 38 4 10 250 +100 40 V mΩ ...