N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP50T10AGP-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low ...
Description
Advanced Power Electronics Corp.
AP50T10AGP-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low Gate Charge Fast Switching Performance RoHS-compliant, halogen-free G S D
BV DSS RDS(ON) ID
100V 35mΩ 36A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP50T10AGP-HF-3 is in the TO-220 through-hole package which is used in commercial appplications where a low PCB footprint or an attached heatsink is required. This device is well suited for low voltage applications such as DC/DC converters.
G D
D (tab)
S
TO-220 (P)
Absolute Maximum Ratings
Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
Rating 100 ±20 36 22 100 89.2 2 -55 to 150 -55 to 150
Units V V A A A W W °C °C
Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.4 62 Units °C/W °C/W
Ordering Information
AP50T10AGP-HF-3TB : in RoHS-compliant halogen-free TO-220, shipped in tubes (50pcs/tube)
©2011 Advanced Power Electronics Corp. USA www.a-powerusa.com
201103021-3
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Advanced Power Electronics Corp.
AP50T10AGP-HF-3
Electrical S...
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