N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP55T10GH-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Dr...
Description
Advanced Power Electronics Corp.
AP55T10GH-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free
G
D S
Description
AP55T10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.
BVDSS RDS(ON) ID
100V 16.5mΩ
56A
G
D S
TO-252(H)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
100 V
VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ
Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
+20 56 40 160 125 2 -55 to 175 -55 to 175
V A A A W W ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c Rthj-a
Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Data and specifications subject to change without notice
Value 1.2 62.5
Units ℃/W ℃/W
1 201501293
AP55T10GH-HF
Electrical Char...
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