AP75T10GS

AP75T10GS/P Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Fast Switching Characteristic G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 100V 15mΩ 72A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP75T10GP) are available for low-profile applications. G D G D S TO-263(S) TO-220(P) S Units V V A A A W W/℃ ℃ ℃ Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 100 ±20 72 45 260 138 1.11 -55 to 150 -55 to 150 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 0.9 62 Units ℃/W ℃/W AP75T10GS/P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA 2 Min. 100 1 Min. - Typ. 0.09 52 69 12 39 12 75 220 2...