AP80T10GR-HF-3

Advanced Power Electronics Corp. AP80T10GR-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement 100% Avalanche Tested Fast Switching Performance RoHS-compliant, halogen-free G S D BV DSS RDS(ON) ID 100V 9.5mΩ 85A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP80T10GR-HF-3 is in the TO-262 package, which is widely used for commercial and industrial applications, and is well-suited for low voltage applications such as DC/DC converters and motor drives. G D TO-262 (R) S Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Chip) Continuous Drain Current Continuous Drain Current, Pulsed Drain Current 1 Rating 100 ±20 85 80 60 300 166 -55 to 175 -55 to 175 Units V V A A A A W °C °C Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.9 62 Units °C/W °C/W Ordering Information AP80T10GR-HF-3TB RoHS-compliant halogen-free TO-262, shipped in tubes ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 201008171-3 1/5 Advanced Power Electronics Corp. AP80T10GR-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Sym...