AP95T10GP-HF

AP95T10GP-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 100V 6.4mΩ 150A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. G The TO-220 package is widely preferred for commercial-industrial through-hole applications. D TO-220(P) S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TC=25℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V(Silicon Limited) Continuous Drain Current, VGS @ 10V(Silicon Limited) Continuous Drain Current, VGS @ 10V(Package Limited) Rating 100 +20 150 108 120 600 375 -55 to 175 -55 to 175 Units V V A A A A W ℃ ℃ Pulsed Drain Current 1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maixmum Thermal Resistance, Junction-ambient Value 0.4 62 Units ℃/W ℃/W 1 201202152 Data and specifications subject to change without notice AP95T10GP-HF Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Gat...