Document
Advanced Power Electronics Corp.
AP94T07GMT-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Industry Standard Compatible "5x6" Package with Heatsink Low On-resistance RoHS-compliant, halogen-free G S
D D
D
BV DSS R DS(ON) ID
75V 7.5mΩ 65A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The PMPAK®5x6 package is specially designed for DC-DC converter applications, with a foot print that is compatible with other popular "5x6" packages and offers a backside heat sink and low package profile. S S
D
D
S
G
PMPAK®5x6
Absolute Maximum Ratings
Symbol VDS VGS ID at TC=25°C ID at TA=25°C ID at TA=70°C IDM PD at TC=25°C PD at TA=25°C EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Chip) Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 75 ±20 65 18.4 14.7 200 62.5 5
4
Units V V A A A A W W mJ °C °C
Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
28.8 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient
3
Value 2.0 25
Units °C/W °C/W
Ordering Information
AP94T07GMT-HF-3TR RoHS-compliant halogen-free PMPAK®5x6, shipped on tape and reel (3000pcs/reel)
PMPAK is a registered trademark of Advanced Power Electronics Corp.
®
©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com
201001252-3
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Advanced Power Electronics Corp.
AP94T07GMT-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance
2
Test Conditions VGS=0V, ID=250uA VGS=10V, ID=30A
Min. 75 -
Typ. -
Max. Units 7.5 V mΩ
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge
2
VDS=VGS, ID=250uA VDS=10V, ID=30A VDS=60V, VGS=0V VGS=± 20V ID=30A VDS=40V VGS=10V VDS=40V ID=1A RG=3.3Ω , VGS=10V RD=40Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz
2 -
55 54 14.5 25 16 14 40 37 390 245 1.3
5 25 ±100 86 -
V S uA nA nC nC nC ns ns ns ns pF pF pF Ω
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
2
2350 3760
Source-Drain Diode
Symbol VSD Parameter Forward On Voltage
2 2
Test Conditions IS=30A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/µs
Min. -
Typ. 46 86
Max. Units 1.3 V ns nC
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by maximum junction temperature 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec, 60°C/W at steady state. 4.Starting Tj=25oC, VDD=30V, L=0.1mH, RG=25Ω , IAS=24A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com
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Advanced Power Electronics Corp.
Typical Electrical Characteristics
250 100
AP94T07GMT-HF-3
T C =150 C
80
T C =25 C
200
o
10V 9.0V 8.0V ID , Drain Current (A)
o
ID , Drain Current (A)
10V 9.0V 8.0V 7.0V V G =6.0V
150
7.0V
60
100
V G = 6.0V
40
50
20
0 0 4 8 12 16 20
0 0 4 8 12 16
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2 2.0
Fig 2. Typical Output Characteristics
I D =30A V G =10V Normalized BVDSS (V) Normalized RDS(ON)
-50 0 50 100 150 1.1 1.6
1
1.2
0.9
0.8
0.8
0.4 -50 0 50 100 150
T j , Junction Temperature ( o C)
T j , Junction Temperature ( o C)
Fig 3.
40
Normalized BVDSS vs. Junction Temperature
1.6
Fig 4. Normalized On-Resistance vs. Junction Temperature
Normalized VGS(th) (V)
1.4
30
1.2
IS(A)
T j =150 o C
20
T j =25 o C
0.8
10
0.4
0 0 0.2 0.4 0.6 0.8 1 1.2
0.0 -50 0 50 100 150
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C)
Fig 5. Forward Characteristic of Reverse Diode
Fig 6. Gate Threshold Voltage vs. Junction Temperature
©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com
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Advanced Power Electronics Corp.
Typical Electrical Characteristics (cont.)
12 3200
AP94T07GMT-HF-3
f=1.0MHz
VGS , Gate to Source Voltage (V)
I D =30A V DS =40V
10
2800
2400 8
C iss
C (pF)
2000
6
1600
.