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This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SD2693, 2SD2693A
Silicon NPN triple diffusion planar type
For power amplification Complementary to 2SB1724, 2SB1724A ■ Features
• Wide safe oeration area • Satisfactory linearity of forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw.
15.0±0.5
Unit: mm
9.9±0.3
3.0±0.5
4.6±0.2 2.9±0.2
φ 3.2±0.1
13.7±0.2 4.2±0.2 Solder Dip
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) (Base open) Collector current Peak collector current
*
1.4±0.2 1.6±0.2 0.8±0.1
2.6±0.1
Symbol 2SD2693 2SD2693A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C 2SD2693A VCBO
Rating 60 80 60 80 6 3 5 25 2.0 150 −55 to +150
Unit V V
0.55±0.15
Collector-emitter voltage 2SD2693 Emitter-base voltage (Collector open)
2.54±0.30 5.08±0.50 1 2 3
V A A W °C °C
1: Base 2: Collector 3: Emitter TO-220D-A1 Package
Collector power dissipation Junction temperature Storage temperature
Internal Connection
C B E
Note) *: Non-repetitive peak collector current
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open)
*1
Symbol 2SD2693 2SD2693A 2SD2693A 2SD2693 2SD2693A 2SD2693 ICES IEBO hFE1
*2
Conditions IC = 30 mA, IB = 0
Min 60 80
Typ
Max
Unit V
VCEO
Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Collector-emitter cutoff current (E-B short)
ICBO ICEO
VCB = 80 V, IE = 0 VCE = 60 V, IB = 0 VCE = 80 V, IB = 0 VCE = 60 V, IB = 0 VEB = 6 V, IC = 0 VCE = 4 V, IC = 1 A VCE = 4 V, IC = 3 A IC = 3 A, IB = 0.375 A VCE = 10 V, IC = 0.5 A, f = 10 MHz IC = 1 A, Resistance loaded IB1 = 0.1 A, IB2 = − 0.1 A VCC = 50 V 30 0.1 2.3 0.3 70 10
100 100
mA µA
100 1 250 0.8
µA mA V MHz µs µs µs
Emitter-base cutoff current (Collector open) Forward current transfer ratio
*1
hFE2 Collector-emitter saturation voltage *1 Transition frequency Turn-on time Storage time Fall time VCE(sat) fT ton tstg tf
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank hFE1 Q 70 to 150 P 120 to 250
SJD00322BED
Publication date: September 2005
1
This product complies with the RoHS Directive (EU 2002/95/EC).
Request for your special attention and precautions in using the technical information and semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or othe.