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HK13003 Dataheets PDF



Part Number HK13003
Manufacturers HUAKE
Logo HUAKE
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Datasheet HK13003 DatasheetHK13003 Datasheet (PDF)

HK13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ●FEATURES:■HIGH VOLTAGE CAPABILITY ●APPLICATION: ■FLUORESCENT LAMP ■HIGH SPEED SWITCHING ■ELECTRONIC BALLAST ■WIDE SOA Absolute Maximum Ratings Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC Tj Tstg Value 600 400 9 1.2 25 150 -65-150 Unit V V V A W °C °C Electronic Characteristics (Tj=25°C .

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HK13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ●FEATURES:■HIGH VOLTAGE CAPABILITY ●APPLICATION: ■FLUORESCENT LAMP ■HIGH SPEED SWITCHING ■ELECTRONIC BALLAST ■WIDE SOA Absolute Maximum Ratings Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC Tj Tstg Value 600 400 9 1.2 25 150 -65-150 Unit V V V A W °C °C Electronic Characteristics (Tj=25°C Unless OtherWise Specified) Parameter Symbol Test Conditons Min Collector-Base BVCBO IC=1mA, IE=0 600 Breakdown Voltage Collector-Emitter BVCEO IC =10mA, IB=0 400 Breakdown Voltage Emitter-Base BVEBO IE=1mA, IC=0 9 Breakdown Voltage Collector-Base ICBO VCB=600V,IE=0 Cutoff Current Collector-Emitter ICEO VCE=400V, IB=0 Cutoff Current Emitter –Base IEBO VEB=9V, IC=0 Cutoff Current DC Current Gain hFE(1) VCE =10V, IC =100mA 15 DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Storage Time Falling Time hFE(2) VCESAT VBESAT ts tf VCE =5V, IC =1mA IC =1.2A, IB =0.3A IC =1.2A, IB =0.3A UI9600 IC =0.25A 1.5 9 Max Unit V V V 10 20 20 30 μA μA μA 1.2 1.3 3.0 1.0 V V μs μs HUAKE semiconductors 2013.02 1/3 :HK-WI-TD-002 /:A/0 HK13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR SOA (DC) 10 Pc∝Tj % 120 100 Ic(A) 1 80 60 Ptot IS/B 0.1 40 20 0.01 1 10 100 0 Vce(v) 1000 0 50 100 150 Tj(℃) 200 100 hFE hFE - Ic 100 hFE hFE - Ic Tj=125℃ Tj=25℃ Tj= − 40℃ Tj=125℃ Tj=25℃ Tj= − 40℃ 10 10 Vce=1.5V Vce=5V 1 0.01 0.1 1 Ic(A) 10 1 0.01 0.1 1 Ic(A) 10 10 Vces(v) hFE=5 Vces - Ic 1.8 Tj=125℃ Tj=25℃ Tj= − 40℃ Vbes(v) hFE=5 Vbes - Ic 1.6 1.4 1.2 1 0.8 1 Tj= − 40℃ Tj=125℃ Tj=25℃ 0.1 0.6 0.4 0.2 0.01 0.1 1 Ic(A) 0 0.1 1 10 Ic(A) 10 HUAKE semiconductors 2013.02 2/3 :HK-WI-TD-002 /:A/0 HK13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR TO-126 MECHANICAL DATA SYMBOL A B B1 b c D E e min 2.3 1.0 0.8 0.65 0.36 10.5 7.2 nom max 2.8 1.2 1.0 0.88 0.60 11.1 7.8 SYMBOL L L1 φP φP1 Q Q1 R min 15.3 3.0 3.6 0.9 UNIT:mm nom max 16.5 2.54 3.2 5.0 4.4 1.5 0.5* 2.29 HUAKE semiconductors 2013.02 3/3 :HK-WI-TD-002 /:A/0 .


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