Document
HK13003
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
●FEATURES:■HIGH VOLTAGE CAPABILITY ●APPLICATION: ■FLUORESCENT LAMP
■HIGH SPEED SWITCHING ■ELECTRONIC BALLAST
■WIDE SOA
Absolute Maximum Ratings Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC Tj Tstg
Value 600 400 9 1.2 25 150 -65-150
Unit V V V A W °C °C
Electronic Characteristics (Tj=25°C Unless OtherWise Specified) Parameter Symbol Test Conditons Min Collector-Base BVCBO IC=1mA, IE=0 600 Breakdown Voltage Collector-Emitter BVCEO IC =10mA, IB=0 400 Breakdown Voltage Emitter-Base BVEBO IE=1mA, IC=0 9 Breakdown Voltage Collector-Base ICBO VCB=600V,IE=0 Cutoff Current Collector-Emitter ICEO VCE=400V, IB=0 Cutoff Current Emitter –Base IEBO VEB=9V, IC=0 Cutoff Current DC Current Gain hFE(1) VCE =10V, IC =100mA 15 DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Storage Time Falling Time hFE(2) VCESAT VBESAT ts tf VCE =5V, IC =1mA IC =1.2A, IB =0.3A IC =1.2A, IB =0.3A UI9600 IC =0.25A 1.5 9
Max
Unit V V V
10 20 20 30
μA μA μA
1.2 1.3 3.0 1.0
V V μs μs
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HK13003
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
SOA (DC)
10
Pc∝Tj
%
120 100
Ic(A)
1
80 60
Ptot
IS/B
0.1
40 20
0.01 1 10 100
0
Vce(v)
1000
0
50
100
150
Tj(℃) 200
100
hFE
hFE - Ic
100
hFE
hFE - Ic
Tj=125℃ Tj=25℃ Tj= − 40℃
Tj=125℃ Tj=25℃ Tj= − 40℃
10
10
Vce=1.5V
Vce=5V
1 0.01
0.1
1
Ic(A)
10
1 0.01
0.1
1
Ic(A)
10
10
Vces(v)
hFE=5
Vces - Ic
1.8
Tj=125℃ Tj=25℃ Tj= − 40℃
Vbes(v)
hFE=5
Vbes - Ic
1.6 1.4 1.2 1 0.8
1
Tj= − 40℃
Tj=125℃
Tj=25℃
0.1
0.6 0.4 0.2
0.01 0.1 1
Ic(A)
0 0.1 1
10
Ic(A)
10
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HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
TO-126 MECHANICAL DATA
SYMBOL A B B1 b c D E e min 2.3 1.0 0.8 0.65 0.36 10.5 7.2 nom max 2.8 1.2 1.0 0.88 0.60 11.1 7.8 SYMBOL L L1 φP φP1 Q Q1 R min 15.3 3.0 3.6 0.9 UNIT:mm nom max 16.5 2.54 3.2 5.0 4.4 1.5 0.5*
2.29
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