D5109

2SC5109 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5109 For VCO Application Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IB IC PC Tj Tstg Rating 20 10 3 30 60 150 125 -55~125 Unit V V V mA mA mW °C °C JEDEC JEITA TOSHIBA ― SC-59 2-3F1A Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Transition frequency Insertion gain Output capacitance Reverse transfer capacitance Collector-base time constant Symbol ICBO IEBO hFE (Note 1) fT ïS21eï Cob Cre Cc･rbb’ 2 Weight: 0.012 g (typ.) Test Condition VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 5 V, IC = 5 mA VCE = 5 V, IC = 5 mA VCE = 5 V, IC = 5 mA, f = 1 GHz VCB = 5 V, IE = 0, f = 1 MHz (Note 2) Min ¾ ¾ 80 4 7 ¾ ¾ ¾ Typ. ¾ ¾ ¾ 6 11 0.7 0.5 5.5 Max 0.1 0.1 240 ¾ ¾ ¾ 0.9 10 Unit mA mA GHz dB pF pF ps VCB = 5 V, IC = 3 mA, f = 30 MHz Note 1: hFE classification O: 80~160, Y: 120~240 Note 2: Cre is measured by 3 terminal method with capacitance bridge. 1 2003-03-24 2SC5109 Marking 2 2003-03-24 2SC5109 3 2003-03-24 2SC5109 S-Parameter Frequency (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 ZO = 50 W, Ta = 25°C S11 Mag. 0.631 0.441 0.363 0.338 0.331 0.337 0.344 0.359 0.373 0.391 Ang. -67.7 -111.7 -139.8 -159.8 -175.0 171.9 16...