AP9972AGP-HF

AP9972AGP-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Single Drive Requirement ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 60V 16mΩ 60A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onG resistance and cost-effectiveness. D The TO-220 package is widely preferred for commercial-industrial applications and suited for low voltage applications. S TO-220(P) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 60 +25 60 38 240 89 0.7 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.4 62 Units ℃/W ℃/W 1 201203075 Data and specifications subject to change without notice AP9972AGP-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Test Conditions VGS=0...