Document
Advanced Power Electronics Corp.
AP40T03GS/P-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D BVDSS
▼ Low Gate Charge
RDS(ON)
▼ Fast Switching Characteristic
G
ID
▼ RoHS Compliant & Halogen-Free
S
Description
AP40T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-263 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (AP40T03GP) are available for low-profile applications.
G D S
G D S
30V 25mΩ
28A
TO-263(S)
TO-220(P)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation
Linear Derating Factor
30 +25 28 24 95 31.25 0.25
V V A A A W W/℃
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
-55 to 150 -55 to 150
℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c Rthj-a
Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value 4 40 62
Units ℃/W ℃/W ℃/W
1 201501055
AP40T03GS/P-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th) gfs IDSS
IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA Static Drain-Source On-Resistance2 VGS=10V, ID=18A
VGS=4.5V, ID=14A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=18A
Drain-Source Leakage Current
VDS=30V, VGS=0V
Drain-Source Leakage Current (Tj=125oC) VDS=24V ,VGS=0V
Gate-Source Leakage Total Gate Charge2
VGS= +25V, VDS=0V ID=18A
Gate-Source Charge
VDS=20V
Gate-Drain ("Miller") Charge Turn-on Delay Time2
VGS=4.5V VDS=15V
Rise Time
ID=18A
Turn-off Delay Time
RG=3.3Ω
Fall Time
VGS=10V
Input Capacitance
VGS=0V
Output Capacitance
VDS=25V
Reverse Transfer Capacitance
f=1.0MHz
30 - - V
- 0.032 - V/℃
- - 25 mΩ
- - 45 mΩ
1 - 3V
- 15 -
S
- - 1 uA
- - 250 uA
- - +100 nA
- 8.8 - nC
- 2.5 - nC
- 5.8 - nC
- 6 - ns
- 62 - ns
- 16 - ns
- 4.4 - ns
- 655 - pF
- 145 - pF
- 95 - pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode ) ISM Pulsed Source Current ( Body Diode )1 VSD Forward On Voltage2
Test Conditions VD=VG=0V , VS=1.3V
Tj=25℃, IS=28A, VGS=0V
Min. Typ. Max. Units - - 28 A - - 95 A - - 1.3 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
IS(A)
RDS(ON) (mΩ)
ID , Drain Current (A)
90
T C =25 o C
60
10V 8 .0V
6 .0V
30
V G = 4. 0V
0 0.0 1.0 2.0 3.0 4.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
70
I D =14A T C =25 ℃
50
30
10 0
5 10
V GS , Gate-to-Source Voltage (V)
15
Fig 3. On-Resistance v.s. Gate Voltage
100
10
T j =150 o C
1
T j =25 o C
0.1 0
0.4 0.8 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of Reverse Diode
1.6
VGS(th) (V)
Normalized RDS(ON)
ID , Drain Current (A)
AP40T03GS/P-HF
75
T C =150 o C
50
10V 8 .0V
6 .0V
25
V G =4.0V
0 0.0 1.0 2.0 3.0 4.0
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I D =18A V G =10V
1.4
0.8
0.2 -50
0
50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance v.s. Junction Temperature
2.5
150
2.0
1.5
1.0
0.5 -50 0 50 100 150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
3
AP40T03GS/P-HF
12
I D =18A
9 V DS =10V V DS =15V V DS =20V
6
VGS , Gate to Source Voltage (V)
3
0 0369
Q G , Total Gate Charge (nC)
12
Fig 7. Gate Charge Characteristics
1000
ID (A)
100
10 100us
1
T C =25 o C Single Pulse
1ms 10ms 100ms DC
0 0.1 1 10 100
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating .