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AP40T03GS-HF Dataheets PDF



Part Number AP40T03GS-HF
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP40T03GS-HF DatasheetAP40T03GS-HF Datasheet (PDF)

Advanced Power Electronics Corp. AP40T03GS/P-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D BVDSS ▼ Low Gate Charge RDS(ON) ▼ Fast Switching Characteristic G ID ▼ RoHS Compliant & Halogen-Free S Description AP40T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a .

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Advanced Power Electronics Corp. AP40T03GS/P-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D BVDSS ▼ Low Gate Charge RDS(ON) ▼ Fast Switching Characteristic G ID ▼ RoHS Compliant & Halogen-Free S Description AP40T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-263 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (AP40T03GP) are available for low-profile applications. G D S G D S 30V 25mΩ 28A TO-263(S) TO-220(P) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor 30 +25 28 24 95 31.25 0.25 V V A A A W W/℃ TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value 4 40 62 Units ℃/W ℃/W ℃/W 1 201501055 AP40T03GS/P-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage VGS=0V, ID=250uA Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA Static Drain-Source On-Resistance2 VGS=10V, ID=18A VGS=4.5V, ID=14A Gate Threshold Voltage VDS=VGS, ID=250uA Forward Transconductance VDS=10V, ID=18A Drain-Source Leakage Current VDS=30V, VGS=0V Drain-Source Leakage Current (Tj=125oC) VDS=24V ,VGS=0V Gate-Source Leakage Total Gate Charge2 VGS= +25V, VDS=0V ID=18A Gate-Source Charge VDS=20V Gate-Drain ("Miller") Charge Turn-on Delay Time2 VGS=4.5V VDS=15V Rise Time ID=18A Turn-off Delay Time RG=3.3Ω Fall Time VGS=10V Input Capacitance VGS=0V Output Capacitance VDS=25V Reverse Transfer Capacitance f=1.0MHz 30 - - V - 0.032 - V/℃ - - 25 mΩ - - 45 mΩ 1 - 3V - 15 - S - - 1 uA - - 250 uA - - +100 nA - 8.8 - nC - 2.5 - nC - 5.8 - nC - 6 - ns - 62 - ns - 16 - ns - 4.4 - ns - 655 - pF - 145 - pF - 95 - pF Source-Drain Diode Symbol Parameter IS Continuous Source Current ( Body Diode ) ISM Pulsed Source Current ( Body Diode )1 VSD Forward On Voltage2 Test Conditions VD=VG=0V , VS=1.3V Tj=25℃, IS=28A, VGS=0V Min. Typ. Max. Units - - 28 A - - 95 A - - 1.3 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 IS(A) RDS(ON) (mΩ) ID , Drain Current (A) 90 T C =25 o C 60 10V 8 .0V 6 .0V 30 V G = 4. 0V 0 0.0 1.0 2.0 3.0 4.0 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 70 I D =14A T C =25 ℃ 50 30 10 0 5 10 V GS , Gate-to-Source Voltage (V) 15 Fig 3. On-Resistance v.s. Gate Voltage 100 10 T j =150 o C 1 T j =25 o C 0.1 0 0.4 0.8 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.6 VGS(th) (V) Normalized RDS(ON) ID , Drain Current (A) AP40T03GS/P-HF 75 T C =150 o C 50 10V 8 .0V 6 .0V 25 V G =4.0V 0 0.0 1.0 2.0 3.0 4.0 V DS , Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 2.0 I D =18A V G =10V 1.4 0.8 0.2 -50 0 50 100 T j , Junction Temperature ( o C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.5 150 2.0 1.5 1.0 0.5 -50 0 50 100 150 T j , Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP40T03GS/P-HF 12 I D =18A 9 V DS =10V V DS =15V V DS =20V 6 VGS , Gate to Source Voltage (V) 3 0 0369 Q G , Total Gate Charge (nC) 12 Fig 7. Gate Charge Characteristics 1000 ID (A) 100 10 100us 1 T C =25 o C Single Pulse 1ms 10ms 100ms DC 0 0.1 1 10 100 V DS ,Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating .


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