Document
Advanced Power Electronics Corp.
AP60T03GP/S-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS-compliant, halogen-free G S D
BV DSS RDS(ON) ID
30V 12mΩ 45A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP60T03GS-HF-3 is in the TO-263 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters.
The AP60T03GP-HF-3 is in the TO-220 through-hole package which is used where a low PCB footprint or an attached heatsink is required. G D S
D (tab)
TO-263 (S) D (tab)
G
D
Absolute Maximum Ratings
Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
S
TO-220 (P)
Rating 30 ±20 45 32 120 44 0.35 -55 to 175 -55 to 175
Units V V A A A W W/°C °C °C
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.4 62 Units °C/W °C/W
Ordering Information
AP60T03GS-HF-3TR : in RoHS-compliant halogen-free TO-263, shipped on tape and reel (800 pcs/reel) AP60T03GP-HF-3TB : in RoHS-compliant halogen-free TO-220, shipped in tubes (50pcs/tube)
©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com
200809253-3
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Advanced Power Electronics Corp.
AP60T03GP/S-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 Typ. 0.03 25 11.6 3.9 7 8.8 57.5 18.5 6.4 1135 200 135 Max. Units 12 25 3 1 250 ±100 19 1816 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
∆ BV DSS/∆ Tj
RDS(ON)
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
Static Drain-Source On-Resistance
VGS=10V, ID=20A VGS=4.5V, ID=15A
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=175oC)
VDS=VGS, ID=250uA VDS=10V, ID=10A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=±20V ID=20A VDS=24V VGS=4.5V VDS=15V ID=20A RG=3.3Ω , VGS=10V RD=0.75Ω VGS=0V VDS=25V f=1.0MHz
Gate-Source Forward Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
Source-Drain Diode
Symbol V SD I rr Vrr
Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse width <300us, duty cycle <2%.
Parameter
Test Conditions
Min.
Typ.
Max. Units
Forward On Voltage2 Reverse Recovery Time2 Reverse Recovery Charge
IS=45A, VGS=0V IS=20A, VGS=0V dI/dt=100A/µs
-
23.3 16
1.3 -
V ns nC
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com
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Advanced Power Electronics Corp.
Typical Electrical Characteristics
125 90
AP60T03GP/S-HF-3
100
T C =25 C
o
10V 8.0V ID , Drain Current (A)
T C =175 C
o
10V 8.0V 6.0V
ID , Drain Current (A)
6.0V
75
60
5.0V
5.0V
50
30
25
V G =4.0V
V G =4.0V
0
0 0 1 2 3 4
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
80
2
60
I D =15A T C =25 ° C Normalized R DS(ON)
I D =20A V G =10V
1.6
RDS(ON) (m Ω )
40
1.2
20
0.8
0 2 4 6 8 10
0.4 -50 25 100 175
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
o
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance vs. Junction Temperature
3
100
10
2
IS(A)
T j =175 o C
T j =25 o C
VGS(th) (V)
1 0 -50
1
0.1 0 0.5 1 1.5
25
100
175
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C )
Fig 5. Forward Characteristic of Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com
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Advanced Power Electronics Corp.
Typical Electrical Characteristics (cont.)
12
10000
AP60T03GP/S-HF-3
f=1.0MHz
I D =20A VGS , Gate to Source Voltage (V)
9
C (pF)
V DS =16V V DS =20V V DS =24V
C iss
1000
6
3
C oss C r.