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AP4438CGM-HF-3 Dataheets PDF



Part Number AP4438CGM-HF-3
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP4438CGM-HF-3 DatasheetAP4438CGM-HF-3 Datasheet (PDF)

Advanced Power Electronics Corp. AP4438CGM-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low Gate-Charge Fast Switching Performance RoHS-compliant, halogen-free D BV DSS G S 30V 11.5mΩ 11.8A RDS(ON) ID Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP4438CGM-HF-3 is in the SO-8 package, which is widely used for commercial and industrial surface-mount app.

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Advanced Power Electronics Corp. AP4438CGM-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low Gate-Charge Fast Switching Performance RoHS-compliant, halogen-free D BV DSS G S 30V 11.5mΩ 11.8A RDS(ON) ID Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP4438CGM-HF-3 is in the SO-8 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters. D D D G SO-8 (M) S S S Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC= 70°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ±20 11.8 9.4 40 Units V V A A A Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range 2.5 0.02 -55 to 150 -55 to 150 W W/° C ° C ° C Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Value 50 Unit ° C/W Ordering Information AP4438CGM-HF-3TR : in RoHS-compliant halogen-free SO-8, shipped on tape and reel (3000 pcs/reel) ©2012 Advanced Power Electronics Corp. USA www.a-powerusa.com 201104121-3 1/5 Advanced Power Electronics Corp. AP4438CGM-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=11A VGS=4.5V, ID=7A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS=VGS, ID=250uA VDS=10V, ID=11A VDS=30V, VGS=0V VGS=±20V, VDS=0V ID=11A VDS=15V VGS=4.5V VDS=15V ID=1A RG=3.3Ω VGS=10V VGS=0V VDS=15V f=1.0MHz f=1.0MHz Min. 30 1 Typ. 9 13.3 1.35 20 10 3 4.5 9 5 21 4.5 140 100 1.3 Max. Units 11.5 18 3 10 ±100 16 2.6 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF Ω 1100 1760 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=2.1A, VGS=0V IS=11A, VGS=0V, dI/dt=100A/µs Min. - Typ. 17 8 Max. Units 1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse test - pulse width <300µs , duty cycle <2% C/W on minimum copper pad. 3.Surface mounted on 1 in2 copper pad of FR4 board; 125° THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF .


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