Document
Advanced Power Electronics Corp.
AP72T03GP-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS-compliant, halogen-free G S D
BV DSS RDS(ON) ID
30V 9.5mΩ 65A
Description
D (tab)
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The AP72T03GP-HF-3 is in the TO-220 through-hole package which is used where a low PCB footprint or an attached heatsink is required. G D S
TO-220 (P)
Absolute Maximum Ratings
Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
Rating 30 ±20 65 47 190 70 0.48 -55 to 175 -55 to 175
Units V V A A A W W/°C °C °C
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 2.1 62 Units °C/W °C/W
Ordering Information
AP72T03GP-HF-3TB : in RoHS-compliant halogen-free TO-220, shipped in tubes (50pcs/tube)
©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com
201001072-3
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Advanced Power Electronics Corp.
AP72T03GP-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance
2
Test Conditions VGS=0V, ID=250uA VGS=10V, ID=30A VGS=4.5V, ID=15A
Min. 30 1 -
Typ. 37 15 3 10 8 82 20 8 940 260 180 0.9
Max. Units 9.5 17 3 10 ± 100 24 1500 1.4 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF Ω
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge
2
VDS=VGS, ID=250uA VDS=10V, ID=30A VDS=24V, VGS=0V VGS= ± 20V, VDS=0V ID=30A VDS=24V VGS=4.5V VDS=15V ID=30A RG=3.3Ω, VGS=10V RD=0.5Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
2
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage
2 2
Test Conditions IS=30A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/µs
Min. -
Typ. 28 22
Max. Units 1.2 V ns nC
Reverse Recovery Time
Reverse Recovery Charge
Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse width <300us, duty cycle <2%.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com
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Advanced Power Electronics Corp.
Typical Electrical Characteristics
200 160
AP72T03GP-HF-3
o
T C =25 C
160
o
10V
T C =175 C
10V 7.0V
ID , Drain Current (A)
ID , Drain Current (A)
7.0V
120
120
6.0V 5.0V
80
6.0V
80
5.0V
V G = 4.0V
40
40
V G = 4.0V
0 0 1 2 3 4 5 6 0 0 1 2 3 4 5 6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
16
Fig 2. Typical Output Characteristics
1.8
I D =15A T C =25 ° C Normalized RDS(ON)
2 4 6 8 10
14
I D =30A V G =10V
RDS(ON) (mΩ )
1.4
12
10
1
8
6
0.6 -50 0 50 100 150 200
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
o
Fig 3. On-Resistance vs. Gate Voltage
30 1.8
Fig 4. Normalized On-Resistance vs. Junction Temperature
Normalized VGS(th) (V)
1.4
20
1.2
IS(A)
T j =175 o C
T j =25 o C
10
0.6
0 0 0.2 0.4 0.6 0.8 1 1.2
0.0 -50 0 50 100 150 200
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C )
Fig 5. Forward Characteristic of Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com
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Advanced Power Electronics Corp.
Typical Electrical Characteristics (cont.)
AP72T03GP-HF-3
f=1.0MHz
10
1600
VGS , Gate to Source Voltage (V)
I D = 30 A
8 1200
C (pF)
6
V DS = 15 V V DS = 18 V V DS = 24 V
C iss
800
4
400 2
C oss C rss
0 0 5 10 15 20 25 30
0
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
1000
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (R thjc)
Duty factor=0.5
100
Operation in this area limited by RDS(ON)
0.2
100us
ID (A)
0.1
0.1
0.05
PDM
0.02 0.01
10
T c =25 o C Single Pulse
1 0.1 1 10
1ms 1.