DatasheetsPDF.com

AP72T03GP-HF-3 Dataheets PDF



Part Number AP72T03GP-HF-3
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP72T03GP-HF-3 DatasheetAP72T03GP-HF-3 Datasheet (PDF)

Advanced Power Electronics Corp. AP72T03GP-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS-compliant, halogen-free G S D BV DSS RDS(ON) ID 30V 9.5mΩ 65A Description D (tab) Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP72T03GP-HF-3 is in the TO-220 through-hole package which is used where a low PCB footprint or an attach.

  AP72T03GP-HF-3   AP72T03GP-HF-3


Document
Advanced Power Electronics Corp. AP72T03GP-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS-compliant, halogen-free G S D BV DSS RDS(ON) ID 30V 9.5mΩ 65A Description D (tab) Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP72T03GP-HF-3 is in the TO-220 through-hole package which is used where a low PCB footprint or an attached heatsink is required. G D S TO-220 (P) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating 30 ±20 65 47 190 70 0.48 -55 to 175 -55 to 175 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 2.1 62 Units °C/W °C/W Ordering Information AP72T03GP-HF-3TB : in RoHS-compliant halogen-free TO-220, shipped in tubes (50pcs/tube) ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 201001072-3 1/5 Advanced Power Electronics Corp. AP72T03GP-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=30A VGS=4.5V, ID=15A Min. 30 1 - Typ. 37 15 3 10 8 82 20 8 940 260 180 0.9 Max. Units 9.5 17 3 10 ± 100 24 1500 1.4 V mΩ mΩ V S uA nA nC nC nC ns ns ns ns pF pF pF Ω VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 VDS=VGS, ID=250uA VDS=10V, ID=30A VDS=24V, VGS=0V VGS= ± 20V, VDS=0V ID=30A VDS=24V VGS=4.5V VDS=15V ID=30A RG=3.3Ω, VGS=10V RD=0.5Ω VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=30A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/µs Min. - Typ. 28 22 Max. Units 1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse width <300us, duty cycle <2%. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 2/5 Advanced Power Electronics Corp. Typical Electrical Characteristics 200 160 AP72T03GP-HF-3 o T C =25 C 160 o 10V T C =175 C 10V 7.0V ID , Drain Current (A) ID , Drain Current (A) 7.0V 120 120 6.0V 5.0V 80 6.0V 80 5.0V V G = 4.0V 40 40 V G = 4.0V 0 0 1 2 3 4 5 6 0 0 1 2 3 4 5 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 16 Fig 2. Typical Output Characteristics 1.8 I D =15A T C =25 ° C Normalized RDS(ON) 2 4 6 8 10 14 I D =30A V G =10V RDS(ON) (mΩ ) 1.4 12 10 1 8 6 0.6 -50 0 50 100 150 200 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance vs. Gate Voltage 30 1.8 Fig 4. Normalized On-Resistance vs. Junction Temperature Normalized VGS(th) (V) 1.4 20 1.2 IS(A) T j =175 o C T j =25 o C 10 0.6 0 0 0.2 0.4 0.6 0.8 1 1.2 0.0 -50 0 50 100 150 200 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C ) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature ©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com 3/5 Advanced Power Electronics Corp. Typical Electrical Characteristics (cont.) AP72T03GP-HF-3 f=1.0MHz 10 1600 VGS , Gate to Source Voltage (V) I D = 30 A 8 1200 C (pF) 6 V DS = 15 V V DS = 18 V V DS = 24 V C iss 800 4 400 2 C oss C rss 0 0 5 10 15 20 25 30 0 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics 1000 Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (R thjc) Duty factor=0.5 100 Operation in this area limited by RDS(ON) 0.2 100us ID (A) 0.1 0.1 0.05 PDM 0.02 0.01 10 T c =25 o C Single Pulse 1 0.1 1 10 1ms 1.


AP72T03GP AP72T03GP-HF-3 AP72T03GP-HF


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)