N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP0903GYT-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Good ...
Description
Advanced Power Electronics Corp.
AP0903GYT-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Good Thermal Performance Low On-resistance RoHS-compliant, halogen-free G S D
BV DSS R DS(ON) ID
30V 9mΩ 16A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The PMPAK®3x3 package is specially designed for DC-DC converter applications, with a small foot print that offers a backside heat sink and a low package profile. S S
D
D
D D
S
G
PMPAK®3x3
Absolute Maximum Ratings
Symbol VDS VGS ID at TA=25°C ID at TA=70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 30 ±20 16 13 40 3.5 -55 to 150 -55 to 150
Units V V A A A W °C °C
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient
3
Value 35
Units °C/W
Ordering Information
AP0903GYT-HF-3TR RoHS-compliant halogen-free PMPAK®3x3, shipped on tape and reel (3000pcs/reel)
PMPAK is a registered trademark of Advanced Power Electronics Corp.
®
©2010 Advanced Power Electronics Corp. USA www.a-powerusa.com
201009214-3
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Advanced Power Electronics Corp.
AP0903GYT-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol BVDSS RDS(ON...
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