AP1001BSQ-3

Advanced Power Electronics Corp. AP1001BSQ-3 N-channel Enhancement-mode Power MOSFET Lead(Pb)-free, Halogen-free Low Conductance Losses Fast Switching Performance Low Profile (< 0.7mm ) D BV DSS RDS(ON) G S 25V 6mΩ 15A ID Description The AP1001BSQ-3 uses the latest APEC Power MOSFET silicon TM technology with advanced technology GreenFET packaging to provide the lowest on-resistance, a low profile and dual-sided cooling capability. The GreenFETTM package is compatible with existing soldering techniques and is ideal for power applications, especially for high-frequency/high-efficiency DC-DC converters. GreenFETTM D G S D Absolute Maximum Ratings Symbol VDS VGS ID at TA=25°C ID at TA=100°C ID at TC=25°C IDM C PD at TA=25° PD at TA=70°C C PD at TC=25° EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 3 SQ Rating 25 ±20 15 12 59 120 2.2 1.4 34 5 Units V V A A A A W W W mJ A °C °C Continuous Drain Current Pulsed Drain Current 1 3 3 4 Continuous Drain Current Total Power Dissipation Total Power Dissipation Total Power Dissipation Avalanche Current 4 Single Pulse Avalanche Energy Storage Temperature Range 28.8 24 -40 to 150 -40 to 150 Operating Junction Temperature Range Thermal Data Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case4 Maximum Thermal Resistance, Junction-ambient 3 3.7 58 °C/W °C/W Ordering Information AP1001BSQ-3TR RoHS-compliant halogen-free GreenFETTM SQ package, shipped on tape and reel (4...