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AP9412AGH-HF-3

Advanced Power Electronics

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp. AP9412AGH-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Fast ...


Advanced Power Electronics

AP9412AGH-HF-3

File Download Download AP9412AGH-HF-3 Datasheet


Description
Advanced Power Electronics Corp. AP9412AGH-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Fast Switching Characteristics Low Gate Charge RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 30V 6mΩ 68A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. D (tab) G D S The AP9412AGH-HF-3 is in the TO-252 package which is widely preferred for commercial and industrial surface mount applications such as medium-power DC/DC converters. TO-252 (H) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ±20 68 43 250 44.6 -55 to 150 -55 to 150 Units V V A A A W °C °C Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Value 2.8 110 Unit °C/W °C/W Ordering Information AP9412AGH-HF-3TR : in RoHS-compliant halogen-free TO-252 shipped on tape and reel (3000 pcs/reel) ©2012 Advanced Power Electronics Corp. USA www.a-powerusa.com 200806042-3 1/5 Advanced Power Electronics Corp. AP9412AGH-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Sou...




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