N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP9412AGH-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Fast ...
Description
Advanced Power Electronics Corp.
AP9412AGH-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Fast Switching Characteristics Low Gate Charge RoHS-compliant, halogen-free G S D
BV DSS R DS(ON) ID
30V 6mΩ 68A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
D (tab)
G D S
The AP9412AGH-HF-3 is in the TO-252 package which is widely preferred for commercial and industrial surface mount applications such as medium-power DC/DC converters.
TO-252 (H)
Absolute Maximum Ratings
Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 30 ±20 68 43 250 44.6 -55 to 150 -55 to 150
Units V V A A A W °C °C
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Value 2.8
110
Unit °C/W °C/W
Ordering Information
AP9412AGH-HF-3TR : in RoHS-compliant halogen-free TO-252 shipped on tape and reel (3000 pcs/reel)
©2012 Advanced Power Electronics Corp. USA www.a-powerusa.com
200806042-3
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Advanced Power Electronics Corp.
AP9412AGH-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Sou...
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