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AP9412AGI-HF-3

Advanced Power Electronics

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp. AP9412AGI-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Fully...


Advanced Power Electronics

AP9412AGI-HF-3

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Description
Advanced Power Electronics Corp. AP9412AGI-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Fully isolated package Low Gate Charge RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 30V 6mΩ 68A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP9412AGI-HF-3 is in the TO-220CFM isolated through-hole package which is widely used in commercial and industrial applications where a small PCB footprint or an attached isolated heatsink is required. This device is well suited for use in low voltage switching applications such as DC-DC converters. G D S TO-220CFM (I) Absolute Maximum Ratings Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ±20 68 43 250 34.7 -55 to 150 -55 to 150 Units V V A A A W °C °C Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.6 65 Unit °C/W °C/W Ordering Information AP9412AGI-HF-3TB : in RoHS-compliant halogen-free TO-220CFM, shipped in tubes (50pcs/tube) ©2012 Advanced Power Electronics Corp. USA www.a-powerusa.com 200805081-3 1/5 Advanced Power Electronics Corp. Electrical Specifi...




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