N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP9412AGI-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Fully...
Description
Advanced Power Electronics Corp.
AP9412AGI-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Fully isolated package Low Gate Charge RoHS-compliant, halogen-free G S D
BV DSS R DS(ON) ID
30V 6mΩ 68A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP9412AGI-HF-3 is in the TO-220CFM isolated through-hole package which is widely used in commercial and industrial applications where a small PCB footprint or an attached isolated heatsink is required. This device is well suited for use in low voltage switching applications such as DC-DC converters.
G
D
S
TO-220CFM (I)
Absolute Maximum Ratings
Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 30 ±20 68 43 250 34.7 -55 to 150 -55 to 150
Units V V A A A W °C °C
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 3.6 65 Unit °C/W °C/W
Ordering Information
AP9412AGI-HF-3TB : in RoHS-compliant halogen-free TO-220CFM, shipped in tubes (50pcs/tube)
©2012 Advanced Power Electronics Corp. USA www.a-powerusa.com
200805081-3
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Advanced Power Electronics Corp.
Electrical Specifi...
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