N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP0403GH-HF-3
N-channel Enhancement-mode Power MOSFET
Low On-resistance Simple Drive ...
Description
Advanced Power Electronics Corp.
AP0403GH-HF-3
N-channel Enhancement-mode Power MOSFET
Low On-resistance Simple Drive Requirement Fast Switching Characteristics RoHS-compliant, halogen-free G S D
BV DSS RDS(ON) ID
30V 4.5mΩ 75A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The AP0403GH-HF-3 is in the TO-252 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as DC/DC converters.
D (tab)
G D S
TO-252 (H)
Absolute Maximum Ratings
Symbol VDS VGS ID at TA=25°C ID at TA=100°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 4
Rating 30 ± 20 75 50 300 44.6 0.35 -55 to 150 -55 to 150
Units V V A A A W W/ °C °C °C
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value 2.8 62.5 110
Unit °C/W °C/W °C/W
Maximum Thermal Resistance, Junction-ambient
Ordering Information
AP0403GH-HF-3TR : in RoHS-compliant halogen-free TO-252, shipped on tape and reel (3000 pcs/reel)
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200811052-3
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