N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP3R303GMT-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple D...
Description
Advanced Power Electronics Corp.
AP3R303GMT-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D BVDSS
▼ SO-8 Compatible with Heatsink
RDS(ON)
▼ Low On-resistance
G ID5
▼ RoHS Compliant & Halogen-Free
S
Description
AP3R303 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The
PMPAK ®
5x6
ppackage
is
special
for
voltage
conversion
application
S S
using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance.
S G
30V 3.3mΩ 105A
D D D D
PMPAK 5x6
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ
Drain-Source Voltage
Gate-Source Voltage Drain Current (Chip), VGS @ 10V5 Drain Current3, VGS @ 10V Drain Current3, VGS @ 10V Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
30 +20 105 31 25 250 56.8
5 28.8 -55 to 150 -55 to 150
V V A A A A W W mJ ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Data & specifications subject to change withou...
Similar Datasheet