AP1002BMX-3

Advanced Power Electronics Corp. AP1002BMX-3 N-channel Enhancement-mode Power MOSFET RoHS-compliant, Halogen-free Low Conductance Losses Fast Switching Performance Low Profile (< 0.7mm ) D BV DSS RDS(ON) G S 30V 1.8mΩ 32A ID Description The AP1002BMX-3 uses the latest APEC Power MOSFET silicon TM technology with advanced technology GreenFET packaging to provide the lowest on-resistance, a low profile and dual-sided cooling capability. The GreenFET package is compatible with existing soldering techniques and is ideal for power applications, especially for high-frequency/high-efficiency DC-DC converters. TM GreenFETTM S D G S D Absolute Maximum Ratings MX Symbol VDS VGS ID at TA=25°C ID at TA= 70°C ID at TC=25°C IDM C PD at TA=25° PD at TA=70°C C PD at TC=25° EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 3 Rating 30 ±20 32 25 180 250 2.8 1.8 89 5 Units V V A A A A W W W mJ A °C °C Continuous Drain Current Pulsed Drain Current 1 3 3 4 Continuous Drain Current Total Power Dissipation Total Power Dissipation Total Power Dissipation Avalanche Current 4 Single Pulse Avalanche Energy Storage Temperature Range 28.8 24 -40 to 150 -40 to 150 Operating Junction Temperature Range Thermal Data Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case4 Maximum Thermal Resistance, Junction-ambient 3 1.4 45 °C/W °C/W Ordering Information AP1002BMX-3TR RoHS-compliant halogen-free GreenFET TM MX package, shipped on tape and ...