N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
AP1002BMX-3
N-channel Enhancement-mode Power MOSFET
RoHS-compliant, Halogen-free Low ...
Description
Advanced Power Electronics Corp.
AP1002BMX-3
N-channel Enhancement-mode Power MOSFET
RoHS-compliant, Halogen-free Low Conductance Losses Fast Switching Performance Low Profile (< 0.7mm )
D
BV DSS RDS(ON)
G S
30V 1.8mΩ 32A
ID
Description
The AP1002BMX-3 uses the latest APEC Power MOSFET silicon TM technology with advanced technology GreenFET packaging to provide the lowest on-resistance, a low profile and dual-sided cooling capability. The GreenFET package is compatible with existing soldering techniques and is ideal for power applications, especially for high-frequency/high-efficiency DC-DC converters.
TM
GreenFETTM
S D G S D
Absolute Maximum Ratings
MX
Symbol VDS VGS ID at TA=25°C ID at TA= 70°C ID at TC=25°C IDM C PD at TA=25° PD at TA=70°C C PD at TC=25° EAS IAR TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current
3
3
Rating 30 ±20 32 25 180 250 2.8 1.8 89
5
Units V V A A A A W W W mJ A °C °C
Continuous Drain Current Pulsed Drain Current
1 3 3 4
Continuous Drain Current Total Power Dissipation Total Power Dissipation Total Power Dissipation Avalanche Current
4
Single Pulse Avalanche Energy Storage Temperature Range
28.8 24 -40 to 150 -40 to 150
Operating Junction Temperature Range
Thermal Data
Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case4 Maximum Thermal Resistance, Junction-ambient
3
1.4
45
°C/W °C/W
Ordering Information
AP1002BMX-3TR RoHS-compliant halogen-free GreenFET
TM
MX package, shipped on tape and ...
Similar Datasheet