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AP2308GEN-HF Dataheets PDF



Part Number AP2308GEN-HF
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-channel Enhancement mode Power MOSFET
Datasheet AP2308GEN-HF DatasheetAP2308GEN-HF Datasheet (PDF)

AP2308GEN-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Capable of 2.5V Gate Drive ▼ Lower Gate Charge ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free SOT-23 D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID S G 20V 600mΩ 1.2A Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device. The SOT-23 package is widely used for commercial-industrial ap.

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AP2308GEN-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Capable of 2.5V Gate Drive ▼ Lower Gate Charge ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free SOT-23 D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID S G 20V 600mΩ 1.2A Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device. The SOT-23 package is widely used for commercial-industrial applications. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1 3 3 Rating 20 +8 1.2 1 3.6 0.69 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 180 Unit ℃/W 1 201204255 Data and specifications subject to change without notice AP2308GEN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 20 0.5 - Typ. 0.1 1 1.2 0.4 0.3 17 36 76 73 37 17 13 Max. Units 600 2 1.25 1 10 +30 2 60 V V/℃ mΩ Ω V S uA uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=1.2A VGS=2.5V, ID=0.3A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 VDS=VGS, ID=250uA VDS=5V, ID=1.2A VDS=20V, VGS=0V VGS=+8V, VDS=0V ID=1.2A VDS=16V VGS=4.5V VDS=10V ID=1.2A RG=3.3Ω,VGS=5V RD=10Ω VGS=0V VDS=10V f=1.0MHz Drain-Source Leakage Current (Tj=70oC) VDS=16V ,VGS=0V Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=1.2A, VGS=0V Min. - Typ. - Max. Units 1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 400℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP2308GEN-HF 4.5 3.5 4.0 T A = 25 C o 5.0V 4.5V ID , Drain Current (A) 3.0 TA=150oC 5.0V 4.5V ID , Drain Current (A) 3.5 2.5 3.0 2.5 3.5V 3.5V 2.0 2.0 1.5 1.5 2.5V 2.5V 1.0 1.0 0.5 0.5 V G = 1 .5V 0.0 1.0 2.0 3.0 V G = 1 .5V 0.0 0.0 0.0 1.0 2.0 3.0 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 700 1.6 I D =0.5A T A =25 o C 600 1.4 I D =1.2A V G =4.5V Normalized RDS(ON) 2 3 4 5 RDSON (mΩ) 1.2 500 1.0 400 0.8 300 0.6 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 1.0 0.8 1.5 0.6 Normalized VGS(th) 1.2 IS(A) 1.0 0.4 T j =150 o C 0.2 T j =25 o C 0.5 0.0 0 0.2 0.4 0.6 0.8 1 0.0 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP2308GEN-HF f=1.0MHz 10 100 I D =1.2A VGS , Gate to Source Voltage (V) 8 C (pF) 6 V DS =10V V DS =12V V DS =16V C iss 4 C oss 2 C rss 0 10 0 0.5 1 1.5 2 2.5 1 3 5 7 9 11 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 10 1 Normalized Thermal Response (Rthja) Duty factor=0.5 0.2 Operation in this area limited by RDS(ON) 1 1ms 0.1 0.1 ID (A) 0.05 10ms PDM 0.01 t T Single Pulse 0.1 100ms 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja = 400 ℃ /W T A =25 C Single Pulse 0.01 0.1 1 10 o 1s DC 0.001 100 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Circuit Fig 12. Gate Charge Circuit 4 .


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