Document
AP2308GEN-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Capable of 2.5V Gate Drive ▼ Lower Gate Charge ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free
SOT-23 D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
S G
20V 600mΩ 1.2A
Description
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device. The SOT-23 package is widely used for commercial-industrial applications.
D G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current
1 3 3
Rating 20 +8 1.2 1 3.6 0.69 -55 to 150 -55 to 150
Units V V A A A W ℃ ℃
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient
3
Value 180
Unit ℃/W 1 201204255
Data and specifications subject to change without notice
AP2308GEN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
2
Test Conditions VGS=0V, ID=250uA
Min. 20 0.5 -
Typ. 0.1 1 1.2 0.4 0.3 17 36 76 73 37 17 13
Max. Units 600 2 1.25 1 10 +30 2 60 V V/℃ mΩ Ω V S uA uA uA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=1.2A VGS=2.5V, ID=0.3A
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge
2
VDS=VGS, ID=250uA VDS=5V, ID=1.2A VDS=20V, VGS=0V VGS=+8V, VDS=0V ID=1.2A VDS=16V VGS=4.5V VDS=10V ID=1.2A RG=3.3Ω,VGS=5V RD=10Ω VGS=0V VDS=10V f=1.0MHz
Drain-Source Leakage Current (Tj=70oC) VDS=16V ,VGS=0V
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
Source-Drain Diode
Symbol VSD Parameter Forward On Voltage
2
Test Conditions IS=1.2A, VGS=0V
Min. -
Typ. -
Max. Units 1.2 V
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 400℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2
AP2308GEN-HF
4.5 3.5
4.0
T A = 25 C
o
5.0V 4.5V
ID , Drain Current (A)
3.0
TA=150oC
5.0V 4.5V
ID , Drain Current (A)
3.5
2.5
3.0
2.5
3.5V
3.5V
2.0
2.0
1.5
1.5
2.5V
2.5V
1.0
1.0 0.5
0.5
V G = 1 .5V
0.0 1.0 2.0 3.0
V G = 1 .5V
0.0
0.0 0.0 1.0 2.0 3.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
700
1.6
I D =0.5A T A =25 o C
600
1.4
I D =1.2A V G =4.5V
Normalized RDS(ON)
2 3 4 5
RDSON (mΩ)
1.2
500
1.0
400
0.8
300
0.6 -50 0 50 100 150
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
2.0
1.0
0.8 1.5
0.6
Normalized VGS(th)
1.2
IS(A)
1.0
0.4
T j =150 o C
0.2
T j =25 o C
0.5
0.0 0 0.2 0.4 0.6 0.8 1
0.0 -50 0 50 100 150
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
3
AP2308GEN-HF
f=1.0MHz
10
100
I D =1.2A VGS , Gate to Source Voltage (V)
8
C (pF)
6
V DS =10V V DS =12V V DS =16V C iss
4
C oss
2
C rss
0
10 0 0.5 1 1.5 2 2.5 1 3 5 7 9 11
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
1
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.2
Operation in this area limited by RDS(ON) 1
1ms
0.1
0.1
ID (A)
0.05
10ms
PDM
0.01
t T
Single Pulse
0.1
100ms
0.01
Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja = 400 ℃ /W
T A =25 C Single Pulse
0.01 0.1 1 10
o
1s DC
0.001 100 0.0001 0.001 0.01 0.1 1 10 100 1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS 90%
VG
QG
4.5V QGS
QGD
10% VGS td(on) tr td(off) tf
Charge
Q
Fig 11. Switching Time Circuit
Fig 12. Gate Charge Circuit
4
.