N-channel Enhancement-mode Power MOSFET
AP9T16AGH-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Lower Gate Charge ▼ Capable of 2.5V Gate Drive ▼ F...
Description
AP9T16AGH-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Lower Gate Charge ▼ Capable of 2.5V Gate Drive ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
20V 20mΩ 19.5A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G D S
TO-252(H)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current
1
Rating 20 +12 19.5 12.3 80 12.5 2 -55 to 150 -55 to 150
Units V V A A A W W ℃ ℃
Total Power Dissipation Total Power Dissipation
3
Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value 10 62.5
Units ℃/W ℃/W 1 201110071
Data and specifications subject to change without notice
AP9T16AGH-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance
2
Test Conditions VGS=0V...
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