TPCP8008-H

TPCP8008-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPCP8008-H High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications 0.33 ± 0.05 Unit: mm 8 0.05 M Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 3.8 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 16 mΩ (typ.) (VGS = 4.5 V) High forward transfer admittance: |Yfs| = 26 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) S A 5 2.4 ± 0.1 2.8 ± 0.1 0.05 A M 0.475 1 0.65 2.9 ± 0.1 4 B B 0.8 ± 0.05 0.025 S 0.17 ± 0.02 ＋0.1 0.28 －0.11 ＋0.13 1.12 －0.12 ＋0.13 1.12 －0.12 0.28 ＋0.1 －0.11 Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating 30 30 ±20 8 32 1.68 0.84 42 8 0.11 150 −55 to 150 Unit V V V A 1,2,3 ：SOURCE 4 ：GATE 5,6,7,8：DRAIN JEDEC JEITA ⎯ ⎯ 2-3V1K Pulsed (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Drain power dissipation Drain power dissipation W W mJ A mJ °C °C TOSHIBA Weight: 0.017g (typ.) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc = 25℃) (Note 4) Channel temperature Storage temperature range Circuit Configuration 8 7 6 5 Note: For Notes 1 to 5, refer to the next page. Using conti...