TPCC8002-H

TPCC8002-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCC8002-H High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 7.1 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 7.6 mΩ (typ.) ( VGS = 4.5 V) High forward transfer admittance: |Yfs| = 65 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR EAR Tch Tstg Rating 30 30 ±20 22 66 30 1.9 0.7 126 22 2.1 150 −55 to 150 W W W mJ A 1,2,3:SOURCE 5,6,7,8:DRAIN 4:GATE Unit V V V A Pulsed (Note 1) Drain power dissipation Drain power dissipation Drain power dissipation (Tc = 25 ) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) JEDEC JEITA TOSHIBA ⎯ ⎯ 2-3X1A Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc = 25 ) (Note 4) Channel temperature Storage temperature range Weight: 0.02 g (typ.) mJ °C °C Circuit Configuration 8 7 6 5 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this prod...