TPCA8027-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSⅢ)
TPCA8027-H
Switching Re...
TPCA8027-H
TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSⅢ)
TPCA8027-H
Switching
Regulator Applications Motor Drive Applications
Unit: mm
Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 8.1 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 8.0 mΩ (typ.) High forward transfer admittance: |Yfs| = 44 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
0.5±0.1 1.27 8
0.4±0.1 5
0.05 M A
6 .0 ± 0 .3 5 .0 ± 0 .2
0.15±0.05
0.95±0.05
1
4
5 .0 ± 0 .2
0.595
A 0.166±0.05
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
S
0.05 S
1
4 1.1±0.2
0 .6 ± 0 .1 3 .5 ± 0 .2
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
Drain current
DC (Note 1) Pulsed (Note 1)
Drain power dissipation (Tc=25℃)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc = 25℃) (Note 4)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD PD
PD
EAS IAR EAR Tch Tstg
40
V
40
V
±20
V
30 A
90
45
W
2.8
W
1.6
W
84
mJ
30
A
4.5
mJ
150
°C
−55 to 150
°C
4.25±0.2
1,2,3:SO8URCE 5,6,7,8:DRAIN
54:0G.8A±0T.1E
JEDEC
―
JEITA
―
TOSHIBA
2-5Q1A
Weight: 0.080 g (typ.)
Circuit Configuration
8765
Note: For Notes 1 ...
