TJ70A06J3

TJ70A06J3 MOSFETs Silicon P-Channel MOS (U-MOS) TJ70A06J3 1. Applications Relay Drivers DC-DC Converters Motor Drivers 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 5.6 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Note 3) (Note 3) (Tc = 25) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR Tch Tstg Rating -60 ±20 -70 -280 54 685 -70 175 -55 to 175 W mJ A  A Unit V Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2011-09-28 Rev.1.0 T...