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TK50J30D
Silicon N-Channel MOSFET
Description
MOSFETs Silicon N-Channel MOS (π-MOS) TK50J30D 1. Applications Switching Voltage
Regulator
s 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.04 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 300 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK50J30D 1: Gate (G) 2: Drain (D)(...
Toshiba Semiconductor
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