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TK7A90E

Toshiba Semiconductor

Silicon N-Channel MOSFET


Description
TK7A90E MOSFETs Silicon N-Channel MOS (π-MOS) TK7A90E 1. Applications Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 1.6 Ω (typ.) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.7 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Sou...



Toshiba Semiconductor

TK7A90E

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