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TK39J60W Dataheets PDF



Part Number TK39J60W
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOSFET
Datasheet TK39J60W DatasheetTK39J60W Datasheet (PDF)

MOSFETs Silicon N-Channel MOS (DTMOS) TK39J60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.055 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.9 mA) 3. Packaging and Internal Circuit TK39J60W 1: Gate 2: Drain (Heatsink) 3: Source TO-3P(N) 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics S.

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MOSFETs Silicon N-Channel MOS (DTMOS) TK39J60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.055 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.9 mA) 3. Packaging and Internal Circuit TK39J60W 1: Gate 2: Drain (Heatsink) 3: Source TO-3P(N) 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature Mounting torque (Tc = 25) (Note 1) (Note 1) (Note 2) (Note 1) (Note 1) VDSS VGSS ID IDP PD EAS IAR IDR IDRP Tch Tstg TOR 600 ±30 38.8 155 270 608 9.7 38.8 155 150 -55 to 150 0.8 V A W mJ A  Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2012-09 1 2013-12-26 Rev.2.0 5. Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Note 1: Ensure that the channel temperature does not exceed 150. Note 2: VDD = 90 V, Tch = 25 (initial), L = 11.3 mH, RG = 25 Ω, IAR = 9.7 A TK39J60W Symbol Rth(ch-c) Rth(ch-a) Max 0.463 50 Unit /W Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2 2013-12-26 Rev.2.0 TK39J60W 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance Symbol Test Condition IGSS IDSS V(BR)DSS Vth RDS(ON) VGS = ±30 V, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1.9 mA VGS = 10 V, ID = 19.4 A Min Typ. Max Unit   ±1 µA   10 600   V 2.7  3.7  0.055 0.065 Ω 6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified) Characteristics Input capacitance Reverse transfer capacitance Output capacitance Effective output capacitance Gate resistance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time) MOSFET dv/dt ruggedness Symbol Test Condition Min Typ. Max Unit Ciss VDS = 300 V, VGS = 0 V, f = 100.


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