Part Number | TK10A60E |
Manufacturer | Toshiba Semiconductor |
Description | MOSFETs |
Features | (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max)... |
Published | Sep 19, 2014 |
Datasheet | TK10A60E PDF File |