SSM6N37FU

SSM6N37FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N37FU ○ High Speed Switching Applications ○ Analog Switch Applications Unit: mm 1.5V drive Low ON-resistance RDS(ON) = 5.60 Ω (max) (@VGS = 1.5 V) RDS(ON) = 4.05 Ω (max) (@VGS = 1.8 V) RDS(ON) = 3.02 Ω (max) (@VGS = 2.5 V) RDS(ON) = 2.20 Ω (max) (@VGS = 4.5 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDSS 20 V Gate-Source voltage VGSS ± 10 V Drain current DC ID Pulse IDP 250 mA 500 Power dissipation PD(Note1) 300 mW JEDEC ― Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C JEITA ― Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-2J1C Weight: 6.8 mg(typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.32mm2 × 6) 0.4 mm 0.8 mm Marking(top view) 6 5 4 SU 1 2 3 Equivale...