SSM6N35FU

SSM6N35FU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N35FU ○ High-Speed Switching Applications ○ Analog Switch Applications Unit: mm 1.2-V drive N-ch 2-in-1 Low ON-resistance: RDS(ON) = 20 Ω (max) (@VGS = 1.2 V) RDS(ON) = 8 Ω (max) (@VGS = 1.5 V) RDS(ON) = 4 Ω (max) (@VGS = 2.5 V) RDS(ON) = 3 Ω (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain–source voltage VDS 20 V Gate–source voltage VGSS ± 10 V Drain current DC ID Pulse IDP 180 mA 360 1.Source 1 4.Source 2 2.Gate 1 5.Gate 2 3.Drain 2 6.Drain 1 Power dissipation Channel temperature Storage temperature PD (Note 1) 200 mW Tch 150 °C Tstg −55 to 150 °C JEDEC JEITA TOSHIBA ― ― 2-2J1C Note: Using continuously under heavy loads (e.g. the application of high Weight: 6.8 mg (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Total rating Marking 6 5 4 KZ 1 2 3 Equivalent Circuit (top view) 654 Q1 Q2 123 Star...