SSM6N15FE

SSM6N15FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FE High Speed Switching Applications Analog Switching Applications Small package Low ON resistance : Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V) Unit: mm (Q1, Q2 Common) Drain-Source voltage Gate-Source voltage Drain current Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol VDS VGSS DC Pulse ID IDP PD (Note 1) Tch Tstg Rating 30 ±20 100 200 150 150 −55~150 Unit V V mA mW °C °C Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating, mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.135 mm × 6) 0.3 mm Note: 1: Source1 2: Gate1 3: Drain2 4: Source2 5: Gate2 6: Drain1 JEDEC JEITA TOSHIBA Weight: 3mg (typ.) ― ― 2-2N1D Marking 6 5 4 0.45 mm Equivalent Circuit (top view) 6 5 4 DP 1 2 3 1 Q1 Q2 2 3 Handling Precaution W...