SSM6N37FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6N37FE
○ High-Speed Switching Applications ○ An...
SSM6N37FE
TOSHIBA Field-Effect
Transistor Silicon N-Channel MOS Type
SSM6N37FE
○ High-Speed Switching Applications ○ Analog Switching Applications
1.5-V drive Suitable for high-density mounting due to compact package
1.6±0.05 1.0±0.05 0.5 0.5
: mm
1.6±0.05 1.2±0.05
Low ON-resistance
5 4
3
0.55±0.05
Characteristic Drain–source voltage Gate–source voltage Drain current Drain power dissipation Channel temperature Storage temperature DC Pulse
Symbol VDSS VGSS ID IDP PD (Note 1) Tch Tstg
Rating 20 ± 10 250 500 150 150 −55 to 150
Unit V V mA mW °C °C
1.Source1 2.Gate1
4.Source2 5.Gate2 6.Drain1
ES6
JEDEC JEITA TOSHIBA
3.Drain2
― ― 2-2N1D
Weight: 3.0 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm2 × 6)
Marking
6 5 4
Equivalent Circuit (top view)
6 5 4
SU
1 2 3 1
Q1 Q2
2
3
1
2009-11-12
0.12±0.05
Absolute Maximum...