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SSM5P05FU Dataheets PDF



Part Number SSM5P05FU
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description MOSFET
Datasheet SSM5P05FU DatasheetSSM5P05FU Datasheet (PDF)

SSM5P05FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM5P05FU Power Management Switch High Speed Switching Applications · · · Small package Low on resistance : Ron = 3.3 Ω (max) (@VGS = −4 V) : Ron = 4.0 Ω (max) (@VGS = −2.5 V) Low gate threshold voltage Unit: mm Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note1) Tch Tstg Rating -20 ±12 -200 -400 300 150 -55~150 Unit V V .

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SSM5P05FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM5P05FU Power Management Switch High Speed Switching Applications · · · Small package Low on resistance : Ron = 3.3 Ω (max) (@VGS = −4 V) : Ron = 4.0 Ω (max) (@VGS = −2.5 V) Low gate threshold voltage Unit: mm Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note1) Tch Tstg Rating -20 ±12 -200 -400 300 150 -55~150 Unit V V mA mW °C °C Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-2L1B Note1: Total rating, mounted on FR4 board 2 (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 0.32 mm ´ 5) Weight: 6.2 mg (typ.) Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2002-01-24 SSM5P05FU Marking 5 4 Equivalent Circuit (top view) 5 4 DH 1 2 3 Q1 Q2 1 2 3 Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth ïYfsï RDS (ON) Ciss Crss Coss ton toff VDD = -3 V, ID = -50 mA, VGS = 0~-2.5 V VDS = -3 V, VGS = 0, f = 1 MHz Test Condition VGS = ±12 V, VDS = 0 ID = -1 mA, VGS = 0 VDS = -20 V, VGS = 0 VDS = -3 V, ID = -0.1 mA VDS = -3 V, ID = -50 mA (Note2) Min ¾ -20 ¾ -0.6 100 ¾ ¾ ¾ ¾ Typ. ¾ ¾ ¾ ¾ ¾ 2.1 3.2 27 7 21 70 70 Max ±1 ¾ -1 -1.1 ¾ 3.3 4.0 ¾ ¾ Unit mA V mA V mS W pF pF pF ns ID = -100 mA, VGS = -4 V (Note2) ID = -50 mA, VGS = -2.5 V (Note2) ¾ ¾ ¾ ¾ ¾ ¾ Note2: Pulse test Switching Time Test Circuit (Q1, Q2 Common) (a) Test circuit 0 -2.5 V 10 ms VDD = -3 V Duty < = 1% VIN: tr, tf < 5 ns (Zout = 50 W) Common Source Ta = 25°C OUT IN 50 9 RL VDD -2.5 V (b) VIN 0V 10% 90% (c)VOUT VDS (ON) 90% 10% tr ton tf toff VDD Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = -100 mA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. VGS recommended voltage of -2.5 V or higher to turn on this product. 2 2002-01-24 SSM5P05FU (Q1, Q2 common) ID – VDS -500 Common Source Ta = 25°C -10 -300 -4 -3 -2.5 -2.3 -2.1 -200 -1.9 -1.7 VGS = -1.5 V 0 0 -0.01 0 -1000 Common Source VDS = -3 V -100 ID – VGS -400 (mA) (mA) ID -10 Ta = 100°C -1 25°C -0.1 -25°C -2.0 Drain current ID -100 -0.5 -1.0 -1.5 Drain current -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 Drain-Source voltage VDS (V) Gate-Source voltage VGS (V) RDS (ON) – ID 6 Common Source Ta = 25°C 5 5 -2.5 V 6 RDS (ON) – VGS Common Source ID = -50 mA Drain-Source on resistance RDS (ON) (W) 4 Drain-Source on resistance RDS (ON) (W) 4 3 VGS = -4 V 2 3 Ta = 100°C 2 25°C 1 1 -25°C 0 0 -100 -200 -300 -400 -500 0 0 -2 -4 -6 -8 -10 Drain current ID (mA) Gate-Source voltage VGS (V) RDS (ON) – Ta 6 Common Source 5 1000 ïYfsï – ID Common Source VDS = -3 V 500 Ta = 25°C 300 Drain-Source on resistance RDS (ON) (W) 4 -2.5 V, -50 mA 3 2 VGS = -4 V, ID = -100 mA Forward transfer admittance ïYfsï (mS) 100 1 50 30 -10 0 -25 0 25 50 75 100 125 150 -30 -50 -100 -300 -500 -1000 Ambient temperature Ta (°C) Drain current ID (mA) 3 2002-01-24 SSM5P05FU (Q1, Q2 common) IDR – VDS -500 Common Source 100 VGS = 0 Ta = 25°C D -300 G IDR S 50 C – VDS (mA) (pF) -400 30 Ciss Coss Drain reverse current IDR Capacitance C 10 5 3 Common Source VGS = 0 f = 1 MHz Ta = 25°C 1 -0.1 -0.3 -1 -3 -10 -30 Crss -200 -100 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Drain-Source voltage VDS (V) Drain-Source voltage VDS (V) t – ID 1000 Common Source 500 toff VDD = -3 V VGS = 0~-2.5 V Ta = 25°C 400 PD* – Ta Mounted on FR4 board. (mW) (ns) 300 (25.4 mm ´ 25.4 mm ´ 1.6 t 2 Cu Pad: 0.32 mm ´ 5) 300 Switching time 100 50 30 Drain power dissipation -3 -10 -30 -100 -300 tf ton tr P D* t 200 100 10 -1 Drain current ID (mA) 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) *: Total rating 4 2002-01-24 SSM5P05FU RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the.


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