Document
SSM5P05FU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM5P05FU
Power Management Switch High Speed Switching Applications
· · · Small package Low on resistance : Ron = 3.3 Ω (max) (@VGS = −4 V) : Ron = 4.0 Ω (max) (@VGS = −2.5 V) Low gate threshold voltage Unit: mm
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note1) Tch Tstg Rating -20 ±12 -200 -400 300 150 -55~150 Unit V V mA mW °C °C
Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
― ― 2-2L1B
Note1: Total rating, mounted on FR4 board 2 (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 0.32 mm ´ 5)
Weight: 6.2 mg (typ.)
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
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2002-01-24
SSM5P05FU
Marking
5 4
Equivalent Circuit (top view)
5 4
DH
1 2 3
Q1
Q2
1
2
3
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth ïYfsï RDS (ON) Ciss Crss Coss ton toff VDD = -3 V, ID = -50 mA, VGS = 0~-2.5 V VDS = -3 V, VGS = 0, f = 1 MHz Test Condition VGS = ±12 V, VDS = 0 ID = -1 mA, VGS = 0 VDS = -20 V, VGS = 0 VDS = -3 V, ID = -0.1 mA VDS = -3 V, ID = -50 mA (Note2) Min ¾ -20 ¾ -0.6 100 ¾ ¾ ¾ ¾ Typ. ¾ ¾ ¾ ¾ ¾ 2.1 3.2 27 7 21 70 70 Max ±1 ¾ -1 -1.1 ¾ 3.3 4.0 ¾ ¾ Unit mA V mA V mS W pF pF pF ns
ID = -100 mA, VGS = -4 V (Note2) ID = -50 mA, VGS = -2.5 V (Note2)
¾ ¾
¾
¾ ¾ ¾
Note2: Pulse test
Switching Time Test Circuit (Q1, Q2 Common)
(a) Test circuit
0 -2.5 V 10 ms VDD = -3 V Duty < = 1% VIN: tr, tf < 5 ns (Zout = 50 W) Common Source Ta = 25°C OUT IN 50 9 RL VDD -2.5 V
(b) VIN
0V 10% 90%
(c)VOUT
VDS (ON)
90% 10% tr ton tf toff
VDD
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = -100 mA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. VGS recommended voltage of -2.5 V or higher to turn on this product.
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SSM5P05FU
(Q1, Q2 common)
ID – VDS
-500 Common Source Ta = 25°C -10 -300 -4 -3 -2.5 -2.3 -2.1 -200 -1.9 -1.7 VGS = -1.5 V 0 0 -0.01 0 -1000 Common Source VDS = -3 V -100
ID – VGS
-400
(mA)
(mA) ID
-10 Ta = 100°C -1 25°C -0.1 -25°C -2.0
Drain current
ID
-100
-0.5
-1.0
-1.5
Drain current
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
Drain-Source voltage VDS
(V)
Gate-Source voltage
VGS
(V)
RDS (ON) – ID
6 Common Source Ta = 25°C 5 5 -2.5 V 6
RDS (ON) – VGS
Common Source ID = -50 mA
Drain-Source on resistance RDS (ON) (W)
4
Drain-Source on resistance RDS (ON) (W)
4
3 VGS = -4 V 2
3
Ta = 100°C
2
25°C
1
1
-25°C
0 0
-100
-200
-300
-400
-500
0 0
-2
-4
-6
-8
-10
Drain current
ID
(mA)
Gate-Source voltage
VGS
(V)
RDS (ON) – Ta
6 Common Source 5 1000
ïYfsï – ID
Common Source VDS = -3 V 500 Ta = 25°C 300
Drain-Source on resistance RDS (ON) (W)
4
-2.5 V, -50 mA
3
2
VGS = -4 V, ID = -100 mA
Forward transfer admittance ïYfsï (mS)
100
1
50 30 -10
0 -25
0
25
50
75
100
125
150
-30
-50
-100
-300 -500
-1000
Ambient temperature Ta (°C)
Drain current
ID
(mA)
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(Q1, Q2 common)
IDR – VDS
-500 Common Source 100 VGS = 0 Ta = 25°C D -300 G IDR S 50
C – VDS
(mA)
(pF)
-400
30
Ciss Coss
Drain reverse current IDR
Capacitance C
10 5 3 Common Source VGS = 0 f = 1 MHz Ta = 25°C 1 -0.1 -0.3 -1 -3 -10 -30 Crss
-200
-100
0 0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Drain-Source voltage VDS
(V)
Drain-Source voltage VDS
(V)
t – ID
1000 Common Source 500 toff VDD = -3 V VGS = 0~-2.5 V Ta = 25°C 400
PD* – Ta
Mounted on FR4 board.
(mW)
(ns)
300
(25.4 mm ´ 25.4 mm ´ 1.6 t 2 Cu Pad: 0.32 mm ´ 5) 300
Switching time
100 50 30
Drain power dissipation
-3 -10 -30 -100 -300
tf ton tr
P D*
t
200
100
10 -1
Drain current
ID
(mA)
0 0
20
40
60
80
100
120
140
160
Ambient temperature Ta (°C)
*: Total rating
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2002-01-24
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RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the.